Local carrier dynamics around the sub-surface basal-plane stacking faults of GaN studied by spatio-time-resolved cathodoluminescence using a front-excitation-type photoelectron-gun

Kentaro Furusawa, Y. Ishikawa, M. Tashiro, K. Hazu, S. Nagao, H. Ikeda, K. Fujito, S. F. Chichibu

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Local carrier dynamics around the sub-surface basal-plane stacking faults (BSFs) accidentally formed in a low dislocation density c-plane GaN were studied by the spatio-time-resolved cathodoluminescence measurement. A high photoelectron (PE) emission efficiency of the front-excitation-type PE-gun enabled to investigate sub-surface defect structures with low acceleration voltages. As a result, the presence of an energy transfer channel of excitons from neutral donor bound states to I1-type BSF bound states was confirmed. Careful comparisons of cathodoluminescence intensity mapping images taken at 3.305 eV and those corresponding to I1-BSFs indicated the presence of prismatic-plane stacking faults connecting the BSFs into a bundle.

Original languageEnglish
Article number052108
JournalApplied Physics Letters
Volume103
Issue number5
DOIs
Publication statusPublished - 2013 Jul 29

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Local carrier dynamics around the sub-surface basal-plane stacking faults of GaN studied by spatio-time-resolved cathodoluminescence using a front-excitation-type photoelectron-gun'. Together they form a unique fingerprint.

  • Cite this