Local carrier dynamics around the sub-surface basal-plane stacking faults of GaN studied by spatio-time-resolved cathodoluminescence using a front-excitation-type photoelectron-gun

K. Furusawa; Y. Ishikawa; M. Tashiro; K. Hazu; S. Nagao; H. Ikeda; K. Fujito; S. F. Chichibu

doi:10.1063/1.4817297

Local carrier dynamics around the sub-surface basal-plane stacking faults of GaN studied by spatio-time-resolved cathodoluminescence using a front-excitation-type photoelectron-gun

K. Furusawa, Y. Ishikawa, M. Tashiro, K. Hazu, S. Nagao, H. Ikeda, K. Fujito, S. F. Chichibu

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

Local carrier dynamics around the sub-surface basal-plane stacking faults (BSFs) accidentally formed in a low dislocation density c-plane GaN were studied by the spatio-time-resolved cathodoluminescence measurement. A high photoelectron (PE) emission efficiency of the front-excitation-type PE-gun enabled to investigate sub-surface defect structures with low acceleration voltages. As a result, the presence of an energy transfer channel of excitons from neutral donor bound states to I₁-type BSF bound states was confirmed. Careful comparisons of cathodoluminescence intensity mapping images taken at 3.305 eV and those corresponding to I₁-BSFs indicated the presence of prismatic-plane stacking faults connecting the BSFs into a bundle.

Original language	English
Article number	052108
Journal	Applied Physics Letters
Volume	103
Issue number	5
DOIs	https://doi.org/10.1063/1.4817297
Publication status	Published - 2013 Jul 29

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Local carrier dynamics around the sub-surface basal-plane stacking faults of GaN studied by spatio-time-resolved cathodoluminescence using a front-excitation-type photoelectron-gun",

abstract = "Local carrier dynamics around the sub-surface basal-plane stacking faults (BSFs) accidentally formed in a low dislocation density c-plane GaN were studied by the spatio-time-resolved cathodoluminescence measurement. A high photoelectron (PE) emission efficiency of the front-excitation-type PE-gun enabled to investigate sub-surface defect structures with low acceleration voltages. As a result, the presence of an energy transfer channel of excitons from neutral donor bound states to I1-type BSF bound states was confirmed. Careful comparisons of cathodoluminescence intensity mapping images taken at 3.305 eV and those corresponding to I1-BSFs indicated the presence of prismatic-plane stacking faults connecting the BSFs into a bundle.",

author = "K. Furusawa and Y. Ishikawa and M. Tashiro and K. Hazu and S. Nagao and H. Ikeda and K. Fujito and Chichibu, {S. F.}",

note = "Funding Information: This work was supported in part by NEDO programs by METI, Grant-in-Aids for Scientific Research Nos. 23656206 and 24760250 under MEXT, and The Asahi Glass Foundation, Japan, and AOARD/AFOSR Grants monitored by Dr. G. Jessen.",

year = "2013",

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doi = "10.1063/1.4817297",

language = "English",

volume = "103",

journal = "Applied Physics Letters",

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T1 - Local carrier dynamics around the sub-surface basal-plane stacking faults of GaN studied by spatio-time-resolved cathodoluminescence using a front-excitation-type photoelectron-gun

AU - Furusawa, K.

AU - Ishikawa, Y.

AU - Tashiro, M.

AU - Hazu, K.

AU - Nagao, S.

AU - Ikeda, H.

AU - Fujito, K.

AU - Chichibu, S. F.

N1 - Funding Information: This work was supported in part by NEDO programs by METI, Grant-in-Aids for Scientific Research Nos. 23656206 and 24760250 under MEXT, and The Asahi Glass Foundation, Japan, and AOARD/AFOSR Grants monitored by Dr. G. Jessen.

PY - 2013/7/29

Y1 - 2013/7/29

N2 - Local carrier dynamics around the sub-surface basal-plane stacking faults (BSFs) accidentally formed in a low dislocation density c-plane GaN were studied by the spatio-time-resolved cathodoluminescence measurement. A high photoelectron (PE) emission efficiency of the front-excitation-type PE-gun enabled to investigate sub-surface defect structures with low acceleration voltages. As a result, the presence of an energy transfer channel of excitons from neutral donor bound states to I1-type BSF bound states was confirmed. Careful comparisons of cathodoluminescence intensity mapping images taken at 3.305 eV and those corresponding to I1-BSFs indicated the presence of prismatic-plane stacking faults connecting the BSFs into a bundle.

AB - Local carrier dynamics around the sub-surface basal-plane stacking faults (BSFs) accidentally formed in a low dislocation density c-plane GaN were studied by the spatio-time-resolved cathodoluminescence measurement. A high photoelectron (PE) emission efficiency of the front-excitation-type PE-gun enabled to investigate sub-surface defect structures with low acceleration voltages. As a result, the presence of an energy transfer channel of excitons from neutral donor bound states to I1-type BSF bound states was confirmed. Careful comparisons of cathodoluminescence intensity mapping images taken at 3.305 eV and those corresponding to I1-BSFs indicated the presence of prismatic-plane stacking faults connecting the BSFs into a bundle.

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Local carrier dynamics around the sub-surface basal-plane stacking faults of GaN studied by spatio-time-resolved cathodoluminescence using a front-excitation-type photoelectron-gun

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