Abstract
Local carrier dynamics around the sub-surface basal-plane stacking faults (BSFs) accidentally formed in a low dislocation density c-plane GaN were studied by the spatio-time-resolved cathodoluminescence measurement. A high photoelectron (PE) emission efficiency of the front-excitation-type PE-gun enabled to investigate sub-surface defect structures with low acceleration voltages. As a result, the presence of an energy transfer channel of excitons from neutral donor bound states to I1-type BSF bound states was confirmed. Careful comparisons of cathodoluminescence intensity mapping images taken at 3.305 eV and those corresponding to I1-BSFs indicated the presence of prismatic-plane stacking faults connecting the BSFs into a bundle.
| Original language | English |
|---|---|
| Article number | 052108 |
| Journal | Applied Physics Letters |
| Volume | 103 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 2013 Jul 29 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
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Furusawa, K., Ishikawa, Y., Tashiro, M., Hazu, K., Nagao, S., Ikeda, H., Fujito, K., & Chichibu, S. F. (2013). Local carrier dynamics around the sub-surface basal-plane stacking faults of GaN studied by spatio-time-resolved cathodoluminescence using a front-excitation-type photoelectron-gun. Applied Physics Letters, 103(5), [052108]. https://doi.org/10.1063/1.4817297