Local C-V Characterization for Ferroelectric Films

Yoshiomi Hiranaga, Takanori Mimura, Takao Shimizu, Hiroshi Funakubo, Yasuo Cho

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, we propose local C-V mapping as a novel method for characterizing ferroelectric domain switching on a nanoscale. This method is an extension of scanning nonlinear dielectric microscopy (SNDM), which is one of the ferroelectric domain observation methods. In the conventional SNDM, a small AC bias is applied to the sample to determine the polarization direction by the phase of the response signal of the capacitance variation induced by the AC bias. On the other hand, in the local C-V mapping proposed this time, a large-Amplitude AC bias is applied to the sample, and the capacitance variation is acquired under the condition that polarization switching occurs. When the sample is a ferroelectric material, the observed C-V curves draw characteristic butterfly-shaped loops. By analyzing these C-V butterfly curves, various information on the domain switching dynamics can be obtained. While conventional C-V measurements are generally performed on a macroscale using micro-to millimeter-scale electrodes, the probe microscopy framework and the high capacitance sensitivity of SNDM enable us to measure local C-V curves with a nanoscale probe tip. In this study, we characterized a randomly-oriented HfO2 film as a demonstration of the proposed method. As a result, we succeeded in visualizing how the switchable and unswitchable regions coexist in the real space. In addition, even inside the switchable region, the observed C-V curve shapes varied depending on the position, suggesting the spatial inhomogeneity in domain switching properties. This method also allows us to map parameters extracted from the C-V curve datasets. Such parameter maps provide a wealth of information on the nanoscale distribution in the switchable polarization, coercive field, and local imprint.

Original languageEnglish
Title of host publicationIEEE International Symposium on Applications of Feeroelectric, ISAF 2021, International Symposium on Integrated Functionalities, ISIF 2021 and Piezoresponse Force Microscopy Workshop, PFM 2021 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781665404440
DOIs
Publication statusPublished - 2021 May 16
Event2021 IEEE International Symposium on Applications of Feeroelectric, ISAF 2021 - Virtual, Sydney, Australia
Duration: 2021 May 162021 May 21

Publication series

NameIEEE International Symposium on Applications of Feeroelectric, ISAF 2021, International Symposium on Integrated Functionalities, ISIF 2021 and Piezoresponse Force Microscopy Workshop, PFM 2021 - Proceedings

Conference

Conference2021 IEEE International Symposium on Applications of Feeroelectric, ISAF 2021
Country/TerritoryAustralia
CityVirtual, Sydney
Period21/5/1621/5/21

Keywords

  • C-V curve
  • domain structure
  • domain switching
  • ferroelectric thin film
  • hafnium oxide
  • machine learning
  • piezoresponse force microscopy
  • principal component analysis
  • scanning nonlinear dielectric microscopy
  • scanning probe microscopy

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films

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