Local atomic structure in Czochralski-grown Ge 1-x Si x bulk alloys

I. Yonenaga, M. Sakurai, M. H.F. Sluiter, Y. Kawazoe

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

We investigated the local atomic structure in GeSi alloy experimentally and theoretically. Extended X-ray absorption fine structure measurements in Czochralski-grown Ge 1-x Si x bulk alloys showed that the Ge-Ge and Ge-Si bond lengths maintain distinctly different lengths and vary linearly with alloy composition across the whole composition range 0 < x < 1. This is in good agreement with the expectation derived from ab initio electronic structure calculations. The result indicates that the bond lengths and bond angles are distorted with alloy composition in GeSi.

Original languageEnglish
Pages (from-to)193-196
Number of pages4
JournalApplied Surface Science
Volume224
Issue number1-4
DOIs
Publication statusPublished - 2004 Mar 15

Keywords

  • Bond angle
  • Bond length
  • Bulk alloy
  • Extended X-ray absorption fine structure
  • Germanium-silicon
  • Silicon-germanium

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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