Lithium-niobate-based surface acoustic wave oscillator directly integrated with CMOS sustaining amplifier

Shuji Tanaka, Kyeongdong Park, Masayoshi Esashi

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)


In this study, a LiNbO 3-based SAW resonator was directly integrated with a CMOS sustaining amplifier using new wafer-bonding-based integration technology. The developed integration technology has overcome the large thermal expansion mismatch between LiNbO 3 (14 to 15 ppm/K along the a-axis) and Si (2.6 ppm/K) by temporary wafer supporting and low-temperature Au-Au bonding. Two kinds of bonding, UV polymer bonding for temporary wafer supporting and Au-Au bonding following plasma surface activation, are key process technologies. A 500-MHz one-chip SAW oscillator was prototyped and evaluated. A low phase noise of -122 dBc/ Hz at 10 kHz offset and -160 dBc/Hz at 500 kHz offset was achieved.

Original languageEnglish
Article number6264143
Pages (from-to)1800-1805
Number of pages6
JournalIEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
Issue number8
Publication statusPublished - 2012

ASJC Scopus subject areas

  • Instrumentation
  • Acoustics and Ultrasonics
  • Electrical and Electronic Engineering


Dive into the research topics of 'Lithium-niobate-based surface acoustic wave oscillator directly integrated with CMOS sustaining amplifier'. Together they form a unique fingerprint.

Cite this