Abstract
In this study, a LiNbO 3-based SAW resonator was directly integrated with a CMOS sustaining amplifier using new wafer-bonding-based integration technology. The developed integration technology has overcome the large thermal expansion mismatch between LiNbO 3 (14 to 15 ppm/K along the a-axis) and Si (2.6 ppm/K) by temporary wafer supporting and low-temperature Au-Au bonding. Two kinds of bonding, UV polymer bonding for temporary wafer supporting and Au-Au bonding following plasma surface activation, are key process technologies. A 500-MHz one-chip SAW oscillator was prototyped and evaluated. A low phase noise of -122 dBc/ Hz at 10 kHz offset and -160 dBc/Hz at 500 kHz offset was achieved.
Original language | English |
---|---|
Article number | 6264143 |
Pages (from-to) | 1800-1805 |
Number of pages | 6 |
Journal | IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control |
Volume | 59 |
Issue number | 8 |
DOIs | |
Publication status | Published - 2012 |
ASJC Scopus subject areas
- Instrumentation
- Acoustics and Ultrasonics
- Electrical and Electronic Engineering