TY - JOUR
T1 - Lithium-niobate-based surface acoustic wave oscillator directly integrated with CMOS sustaining amplifier
AU - Tanaka, Shuji
AU - Park, Kyeongdong
AU - Esashi, Masayoshi
N1 - Funding Information:
Manuscript received January 8, 2012; accepted May 17, 2012. This work was supported by the Funding Program for World-leading Innovative r&d on science and Technology. The Ic wafer was produced using a wafer-sharing scheme organized by the Microsystem Integration center, Tohoku University, under the creation of Innovation centers for advanced Interdisciplinary research areas Program. s. Tanaka is with the department of nanomechanics, Tohoku University, sendai, Japan (e-mail: tanaka@mems.mech.tohoku.ac.jp).
PY - 2012
Y1 - 2012
N2 - In this study, a LiNbO 3-based SAW resonator was directly integrated with a CMOS sustaining amplifier using new wafer-bonding-based integration technology. The developed integration technology has overcome the large thermal expansion mismatch between LiNbO 3 (14 to 15 ppm/K along the a-axis) and Si (2.6 ppm/K) by temporary wafer supporting and low-temperature Au-Au bonding. Two kinds of bonding, UV polymer bonding for temporary wafer supporting and Au-Au bonding following plasma surface activation, are key process technologies. A 500-MHz one-chip SAW oscillator was prototyped and evaluated. A low phase noise of -122 dBc/ Hz at 10 kHz offset and -160 dBc/Hz at 500 kHz offset was achieved.
AB - In this study, a LiNbO 3-based SAW resonator was directly integrated with a CMOS sustaining amplifier using new wafer-bonding-based integration technology. The developed integration technology has overcome the large thermal expansion mismatch between LiNbO 3 (14 to 15 ppm/K along the a-axis) and Si (2.6 ppm/K) by temporary wafer supporting and low-temperature Au-Au bonding. Two kinds of bonding, UV polymer bonding for temporary wafer supporting and Au-Au bonding following plasma surface activation, are key process technologies. A 500-MHz one-chip SAW oscillator was prototyped and evaluated. A low phase noise of -122 dBc/ Hz at 10 kHz offset and -160 dBc/Hz at 500 kHz offset was achieved.
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U2 - 10.1109/TUFFC.2012.2384
DO - 10.1109/TUFFC.2012.2384
M3 - Article
C2 - 22899126
AN - SCOPUS:84865352801
VL - 59
SP - 1800
EP - 1805
JO - Transactions of the IRE Professional Group on Ultrasonic Engineering
JF - Transactions of the IRE Professional Group on Ultrasonic Engineering
SN - 0885-3010
IS - 8
M1 - 6264143
ER -