Lithium-niobate-based surface acoustic wave oscillator directly integrated with CMOS sustaining amplifier

Shuji Tanaka; Kyeongdong Park; Masayoshi Esashi

doi:10.1109/TUFFC.2012.2384

Lithium-niobate-based surface acoustic wave oscillator directly integrated with CMOS sustaining amplifier

Shuji Tanaka, Kyeongdong Park, Masayoshi Esashi

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

In this study, a LiNbO ₃-based SAW resonator was directly integrated with a CMOS sustaining amplifier using new wafer-bonding-based integration technology. The developed integration technology has overcome the large thermal expansion mismatch between LiNbO ₃ (14 to 15 ppm/K along the a-axis) and Si (2.6 ppm/K) by temporary wafer supporting and low-temperature Au-Au bonding. Two kinds of bonding, UV polymer bonding for temporary wafer supporting and Au-Au bonding following plasma surface activation, are key process technologies. A 500-MHz one-chip SAW oscillator was prototyped and evaluated. A low phase noise of -122 dBc/ Hz at 10 kHz offset and -160 dBc/Hz at 500 kHz offset was achieved.

Original language	English
Article number	6264143
Pages (from-to)	1800-1805
Number of pages	6
Journal	IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
Volume	59
Issue number	8
DOIs	https://doi.org/10.1109/TUFFC.2012.2384
Publication status	Published - 2012

ASJC Scopus subject areas

Instrumentation
Acoustics and Ultrasonics
Electrical and Electronic Engineering

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10.1109/TUFFC.2012.2384

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@article{1c8888686cb0462f97ba4f617566b760,

title = "Lithium-niobate-based surface acoustic wave oscillator directly integrated with CMOS sustaining amplifier",

abstract = "In this study, a LiNbO 3-based SAW resonator was directly integrated with a CMOS sustaining amplifier using new wafer-bonding-based integration technology. The developed integration technology has overcome the large thermal expansion mismatch between LiNbO 3 (14 to 15 ppm/K along the a-axis) and Si (2.6 ppm/K) by temporary wafer supporting and low-temperature Au-Au bonding. Two kinds of bonding, UV polymer bonding for temporary wafer supporting and Au-Au bonding following plasma surface activation, are key process technologies. A 500-MHz one-chip SAW oscillator was prototyped and evaluated. A low phase noise of -122 dBc/ Hz at 10 kHz offset and -160 dBc/Hz at 500 kHz offset was achieved.",

author = "Shuji Tanaka and Kyeongdong Park and Masayoshi Esashi",

year = "2012",

doi = "10.1109/TUFFC.2012.2384",

language = "English",

volume = "59",

pages = "1800--1805",

journal = "IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control",

issn = "0885-3010",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "8",

}

TY - JOUR

T1 - Lithium-niobate-based surface acoustic wave oscillator directly integrated with CMOS sustaining amplifier

AU - Tanaka, Shuji

AU - Park, Kyeongdong

AU - Esashi, Masayoshi

PY - 2012

Y1 - 2012

N2 - In this study, a LiNbO 3-based SAW resonator was directly integrated with a CMOS sustaining amplifier using new wafer-bonding-based integration technology. The developed integration technology has overcome the large thermal expansion mismatch between LiNbO 3 (14 to 15 ppm/K along the a-axis) and Si (2.6 ppm/K) by temporary wafer supporting and low-temperature Au-Au bonding. Two kinds of bonding, UV polymer bonding for temporary wafer supporting and Au-Au bonding following plasma surface activation, are key process technologies. A 500-MHz one-chip SAW oscillator was prototyped and evaluated. A low phase noise of -122 dBc/ Hz at 10 kHz offset and -160 dBc/Hz at 500 kHz offset was achieved.

AB - In this study, a LiNbO 3-based SAW resonator was directly integrated with a CMOS sustaining amplifier using new wafer-bonding-based integration technology. The developed integration technology has overcome the large thermal expansion mismatch between LiNbO 3 (14 to 15 ppm/K along the a-axis) and Si (2.6 ppm/K) by temporary wafer supporting and low-temperature Au-Au bonding. Two kinds of bonding, UV polymer bonding for temporary wafer supporting and Au-Au bonding following plasma surface activation, are key process technologies. A 500-MHz one-chip SAW oscillator was prototyped and evaluated. A low phase noise of -122 dBc/ Hz at 10 kHz offset and -160 dBc/Hz at 500 kHz offset was achieved.

UR - http://www.scopus.com/inward/record.url?scp=84865352801&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84865352801&partnerID=8YFLogxK

U2 - 10.1109/TUFFC.2012.2384

DO - 10.1109/TUFFC.2012.2384

M3 - Article

C2 - 22899126

AN - SCOPUS:84865352801

VL - 59

SP - 1800

EP - 1805

JO - IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control

JF - IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control

SN - 0885-3010

IS - 8

M1 - 6264143

ER -