Lithium-niobate-based surface acoustic wave device directly integrated on IC

Kyeong Dong Park, Masayoshi Esashi, Shuji Tanaka

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

In this study, a LiNbO 3-based surface acoustic wave (SAW) resonator was directly integrated with a CMOS sustaining amplifier by new wafer-bonding-based integration technology. The developed integration technology has overcome large thermal expansion mismatch between LiNbO 3 (15-17 ppm/K along a-axis) and Si (2.6 ppm/K) by temporal wafer supporting and low-temperature Au-Au bonding. Two kinds of bonding, UV polymer bonding for temporal wafer supporting and Au-Au bonding following plasma surface activation, are key process technologies. A 500 MHz one-chip SAW oscillator was prototyped and evaluated. A low phase noise of -160 dBc/Hz at 500 kHz offset was achieved.

Original languageEnglish
Title of host publication2011 IEEE International Ultrasonics Symposium, IUS 2011
Pages1956-1959
Number of pages4
DOIs
Publication statusPublished - 2011 Dec 1
Event2011 IEEE International Ultrasonics Symposium, IUS 2011 - Orlando, FL, United States
Duration: 2011 Oct 182011 Oct 21

Publication series

NameIEEE International Ultrasonics Symposium, IUS
ISSN (Print)1948-5719
ISSN (Electronic)1948-5727

Other

Other2011 IEEE International Ultrasonics Symposium, IUS 2011
CountryUnited States
CityOrlando, FL
Period11/10/1811/10/21

Keywords

  • Integration
  • Lithium niobate
  • Phase noise
  • SAW oscillator
  • Wafer bonding

ASJC Scopus subject areas

  • Acoustics and Ultrasonics

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  • Cite this

    Park, K. D., Esashi, M., & Tanaka, S. (2011). Lithium-niobate-based surface acoustic wave device directly integrated on IC. In 2011 IEEE International Ultrasonics Symposium, IUS 2011 (pp. 1956-1959). [6293368] (IEEE International Ultrasonics Symposium, IUS). https://doi.org/10.1109/ULTSYM.2011.0487