Liquid phase epitaxy of si-doped A1N at 13000°c in Ga-Al melt

Asep Ridwan Setiawan, Masayoshi Adachi, Hiroyuki Fukuyama

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In the present study we have successfully grown Si-doped AlN developed by solution growth technique using Ga-Al melt as a solvent under nitrogen atmosphere at 1300 °C. Si doping was introduced to the Ga-Al melt by adding pure Si metal. To allow homoepitaxial growth during solution growth experiment, sapphire substrate were nitrided with precise control to produce hiqh quality single crystalline AlN films with low dislocation density. With the help of AlN film template from above methods, we have successfully grown Si-doped AlN single crystalline layer with a flat surface and almost free from cracks. The full width at half maximum (FWHM) of x-ray rocking curve values for (0002) and (10-12) diffraction from the Si-doped AlN film were 43,2 and 594 arcsec, respectively.

Original languageEnglish
Title of host publicationMaterials, Industrial, and Manufacturing Engineering Research Advances 1.1
Pages3-6
Number of pages4
DOIs
Publication statusPublished - 2014 Jan 7
Event1st International Materials, Industrial, and Manufacturing Engineering Conference, MIMEC 2013 - Johor Bahru, Malaysia
Duration: 2013 Dec 42013 Dec 6

Publication series

NameAdvanced Materials Research
Volume845
ISSN (Print)1022-6680

Other

Other1st International Materials, Industrial, and Manufacturing Engineering Conference, MIMEC 2013
CountryMalaysia
CityJohor Bahru
Period13/12/413/12/6

Keywords

  • Aluminium nitride
  • FWHM
  • Liquid phase epitaxy
  • Nitridation
  • Rocking curve
  • XRD

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Setiawan, A. R., Adachi, M., & Fukuyama, H. (2014). Liquid phase epitaxy of si-doped A1N at 13000°c in Ga-Al melt. In Materials, Industrial, and Manufacturing Engineering Research Advances 1.1 (pp. 3-6). (Advanced Materials Research; Vol. 845). https://doi.org/10.4028/www.scientific.net/AMR.845.3