Liquid phase epitaxial growth and characterization of LiNbO3 single crystal films

Taketoshi Hibiya; Hiroe Suzuki; Ichiro Yonenaga; Shigeru Kimura; Tatsuo Kawaguchi; Toetsu Shishido; Tsuguo Fukuda

doi:10.1016/0022-0248(94)90458-8

Liquid phase epitaxial growth and characterization of LiNbO₃ single crystal films

Taketoshi Hibiya, Hiroe Suzuki, Ichiro Yonenaga, Shigeru Kimura, Tatsuo Kawaguchi, Toetsu Shishido, Tsuguo Fukuda

Materials Design Division

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

LiNbO₃ (LN) thin film crystals are prepared on LN substrates by a liquid phase epitaxial method. An X-ray double crystal diffraction technique is used to characterize misfit strain in LN films. Analysis of lattice parameter differences along the c-axis shows that LN films of almost stoichiometric composition can be grown on an LN substrate prepared by the Czochralski method. X-ray topography reveals that the LN films have a lower dislocation density than the substrate crystals. Surface morphology is changed with increasing film thickness; thicker films do not show a mirror surface, rather hillocks with a three-fold symmetry appear.

Original language	English
Pages (from-to)	213-217
Number of pages	5
Journal	Journal of Crystal Growth
Volume	144
Issue number	3-4
DOIs	https://doi.org/10.1016/0022-0248(94)90458-8
Publication status	Published - 1994 Dec 2

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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abstract = "LiNbO3 (LN) thin film crystals are prepared on LN substrates by a liquid phase epitaxial method. An X-ray double crystal diffraction technique is used to characterize misfit strain in LN films. Analysis of lattice parameter differences along the c-axis shows that LN films of almost stoichiometric composition can be grown on an LN substrate prepared by the Czochralski method. X-ray topography reveals that the LN films have a lower dislocation density than the substrate crystals. Surface morphology is changed with increasing film thickness; thicker films do not show a mirror surface, rather hillocks with a three-fold symmetry appear.",

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AU - Hibiya, Taketoshi

AU - Suzuki, Hiroe

AU - Yonenaga, Ichiro

AU - Kimura, Shigeru

AU - Kawaguchi, Tatsuo

AU - Shishido, Toetsu

AU - Fukuda, Tsuguo

PY - 1994/12/2

Y1 - 1994/12/2

N2 - LiNbO3 (LN) thin film crystals are prepared on LN substrates by a liquid phase epitaxial method. An X-ray double crystal diffraction technique is used to characterize misfit strain in LN films. Analysis of lattice parameter differences along the c-axis shows that LN films of almost stoichiometric composition can be grown on an LN substrate prepared by the Czochralski method. X-ray topography reveals that the LN films have a lower dislocation density than the substrate crystals. Surface morphology is changed with increasing film thickness; thicker films do not show a mirror surface, rather hillocks with a three-fold symmetry appear.

AB - LiNbO3 (LN) thin film crystals are prepared on LN substrates by a liquid phase epitaxial method. An X-ray double crystal diffraction technique is used to characterize misfit strain in LN films. Analysis of lattice parameter differences along the c-axis shows that LN films of almost stoichiometric composition can be grown on an LN substrate prepared by the Czochralski method. X-ray topography reveals that the LN films have a lower dislocation density than the substrate crystals. Surface morphology is changed with increasing film thickness; thicker films do not show a mirror surface, rather hillocks with a three-fold symmetry appear.

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Liquid phase epitaxial growth and characterization of LiNbO₃ single crystal films

Abstract

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