LiNbO3 (LN) thin film crystals are prepared on LN substrates by a liquid phase epitaxial method. An X-ray double crystal diffraction technique is used to characterize misfit strain in LN films. Analysis of lattice parameter differences along the c-axis shows that LN films of almost stoichiometric composition can be grown on an LN substrate prepared by the Czochralski method. X-ray topography reveals that the LN films have a lower dislocation density than the substrate crystals. Surface morphology is changed with increasing film thickness; thicker films do not show a mirror surface, rather hillocks with a three-fold symmetry appear.
|Number of pages||5|
|Journal||Journal of Crystal Growth|
|Publication status||Published - 1994 Dec 2|
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry