With ionic liquid (IL) gating in electric-double-layer transistors (EDLTs), we report field effect operation and electronic state modulation in a layered material of SnS2, demonstrating that the EDLT is applicable to modifying the electronic properties of metal dichalcogenides. The IL-gated SnS2 EDLTs allow us to realize high performance transistor operation and to achieve interfacial carrier accumulation to a level as high as 5.4× 1014 cm-2, as quantitatively estimated from the Hall effect. A considerable decrease of the activation energy in temperature-dependent sheet resistance implies that liquid gating is an effective way to tune the electronic states of metal dichalcogenides at EDL interfaces.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)