Liquid-gated electric-double-layer transistor on layered metal dichalcogenide, SnS2

H. T. Yuan, M. Toh, K. Morimoto, W. Tan, F. Wei, H. Shimotani, Ch Kloc, Y. Iwasa

Research output: Contribution to journalArticlepeer-review

47 Citations (Scopus)

Abstract

With ionic liquid (IL) gating in electric-double-layer transistors (EDLTs), we report field effect operation and electronic state modulation in a layered material of SnS2, demonstrating that the EDLT is applicable to modifying the electronic properties of metal dichalcogenides. The IL-gated SnS2 EDLTs allow us to realize high performance transistor operation and to achieve interfacial carrier accumulation to a level as high as 5.4× 1014 cm-2, as quantitatively estimated from the Hall effect. A considerable decrease of the activation energy in temperature-dependent sheet resistance implies that liquid gating is an effective way to tune the electronic states of metal dichalcogenides at EDL interfaces.

Original languageEnglish
Article number012102
JournalApplied Physics Letters
Volume98
Issue number1
DOIs
Publication statusPublished - 2011 Jan 3
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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