Liquid-gated electric-double-layer transistor on layered metal dichalcogenide, SnS2

H. T. Yuan; M. Toh; K. Morimoto; W. Tan; F. Wei; H. Shimotani; Ch Kloc; Y. Iwasa

doi:10.1063/1.3535613

Liquid-gated electric-double-layer transistor on layered metal dichalcogenide, SnS₂

H. T. Yuan, M. Toh, K. Morimoto, W. Tan, F. Wei, H. Shimotani, Ch Kloc, Y. Iwasa

Research output: Contribution to journal › Article › peer-review

51 Citations (Scopus)

Abstract

With ionic liquid (IL) gating in electric-double-layer transistors (EDLTs), we report field effect operation and electronic state modulation in a layered material of SnS₂, demonstrating that the EDLT is applicable to modifying the electronic properties of metal dichalcogenides. The IL-gated SnS₂ EDLTs allow us to realize high performance transistor operation and to achieve interfacial carrier accumulation to a level as high as 5.4× 1014 cm^-2, as quantitatively estimated from the Hall effect. A considerable decrease of the activation energy in temperature-dependent sheet resistance implies that liquid gating is an effective way to tune the electronic states of metal dichalcogenides at EDL interfaces.

Original language	English
Article number	012102
Journal	Applied Physics Letters
Volume	98
Issue number	1
DOIs	https://doi.org/10.1063/1.3535613
Publication status	Published - 2011 Jan 3
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Liquid-gated electric-double-layer transistor on layered metal dichalcogenide, SnS2",

abstract = "With ionic liquid (IL) gating in electric-double-layer transistors (EDLTs), we report field effect operation and electronic state modulation in a layered material of SnS2, demonstrating that the EDLT is applicable to modifying the electronic properties of metal dichalcogenides. The IL-gated SnS2 EDLTs allow us to realize high performance transistor operation and to achieve interfacial carrier accumulation to a level as high as 5.4× 1014 cm-2, as quantitatively estimated from the Hall effect. A considerable decrease of the activation energy in temperature-dependent sheet resistance implies that liquid gating is an effective way to tune the electronic states of metal dichalcogenides at EDL interfaces.",

author = "Yuan, {H. T.} and M. Toh and K. Morimoto and W. Tan and F. Wei and H. Shimotani and Ch Kloc and Y. Iwasa",

note = "Funding Information: This research was partly supported by CREST-JST and Grant-in-Aid for Scientific Research(S) (Grant No. 21224009) from Japan. W.T. was supported by the Nano-Japan Program from NSF-PIRE. The NTU part of this work was supported by the Singapore Ministry of Education.",

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AU - Yuan, H. T.

AU - Toh, M.

AU - Morimoto, K.

AU - Tan, W.

AU - Wei, F.

AU - Shimotani, H.

AU - Kloc, Ch

AU - Iwasa, Y.

N1 - Funding Information: This research was partly supported by CREST-JST and Grant-in-Aid for Scientific Research(S) (Grant No. 21224009) from Japan. W.T. was supported by the Nano-Japan Program from NSF-PIRE. The NTU part of this work was supported by the Singapore Ministry of Education.

PY - 2011/1/3

Y1 - 2011/1/3

N2 - With ionic liquid (IL) gating in electric-double-layer transistors (EDLTs), we report field effect operation and electronic state modulation in a layered material of SnS2, demonstrating that the EDLT is applicable to modifying the electronic properties of metal dichalcogenides. The IL-gated SnS2 EDLTs allow us to realize high performance transistor operation and to achieve interfacial carrier accumulation to a level as high as 5.4× 1014 cm-2, as quantitatively estimated from the Hall effect. A considerable decrease of the activation energy in temperature-dependent sheet resistance implies that liquid gating is an effective way to tune the electronic states of metal dichalcogenides at EDL interfaces.

AB - With ionic liquid (IL) gating in electric-double-layer transistors (EDLTs), we report field effect operation and electronic state modulation in a layered material of SnS2, demonstrating that the EDLT is applicable to modifying the electronic properties of metal dichalcogenides. The IL-gated SnS2 EDLTs allow us to realize high performance transistor operation and to achieve interfacial carrier accumulation to a level as high as 5.4× 1014 cm-2, as quantitatively estimated from the Hall effect. A considerable decrease of the activation energy in temperature-dependent sheet resistance implies that liquid gating is an effective way to tune the electronic states of metal dichalcogenides at EDL interfaces.

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Liquid-gated electric-double-layer transistor on layered metal dichalcogenide, SnS₂

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