Linear positive and negative magnetoresistance in topological insulator Bi2Se3 flakes

Huachen Zhang, Hui Li, Huanwen Wang, Guanghui Cheng, Hongtao He, Jiannong Wang

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3 Citations (Scopus)

Abstract

The linear positive magnetoresistance (MR) and negative MR are emerging as intriguing phenomena in topological materials. Here, we report the magnetotransport properties of topological insulator Bi2Se3 flakes with different thicknesses grown by chemical vapor deposition. A non-saturating positive MR is observed in the perpendicular fields (B⊥I), while an evident negative MR is observed in the parallel fields (B//I). Both the positive MR and negative MR show a linear magnetic field dependence at high magnetic fields (B > 8 T). In addition, two types of carriers are extracted from the nonlinear Hall resistance measurements, which are attributed to the Bi2Se3 bulk electrons and the electron accumulation layer at the surface or Bi2Se3/SiO2 interface, respectively. The conductivity fluctuations in the accumulation layer are believed to be the origin for the observation of positive MR in the perpendicular fields and negative MR in the parallel fields with linear and non-saturating characteristics.

Original languageEnglish
Article number113503
JournalApplied Physics Letters
Volume113
Issue number11
DOIs
Publication statusPublished - 2018 Sep 10
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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