Light-emitting devices based on top-down fabricated gaas quantum nanodisks

Akio Higo, Takayuki Kiba, Yosuke Tamura, Cedric Thomas, Junichi Takayama, Yunpeng Wang, Hassanet Sodabanlu, Masakazu Sugiyama, Yoshiaki Nakano, Ichiro Yamashita, Akihiro Murayama, Seiji Samukawa

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30 Citations (Scopus)


Quantum dots photonic devices based on the III-V compound semiconductor technology offer low power consumption, temperature stability, and high-speed modulation. We fabricated GaAs nanodisks (NDs) of sub-20-nm diameters by a top-down process using a biotemplate and neutral beam etching (NBE). The GaAs NDs were embedded in an AlGaAs barrier regrown by metalorganic vapor phase epitaxy (MOVPE). The temperature dependence of photoluminescence emission energies and the transient behavior were strongly affected by the quantum confinement effects of the embedded NDs. Therefore, the quantum levels of the NDs may be tuned by controlling their dimensions. We combined NBE and MOVPE in a high-throughput process compatible with industrial production systems to produce GaAs NDs with tunable optical characteristics.NDlight emitting diode exhibited a narrow spectral width of 38 nmof high-intensity emission as a result of small deviation of ND sizes and superior crystallographic quality of the etched GaAs/AlGaAs layer.

Original languageEnglish
Article number9371
JournalScientific reports
Publication statusPublished - 2015

ASJC Scopus subject areas

  • General


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