Light-addressable potentiometric fluoride (F-) sensor

Abu Bakar Md Ismail, Koji Furuichi, Tatsuo Yoshinobu, Hiroshi Iwasaki

Research output: Contribution to journalArticlepeer-review

19 Citations (Scopus)

Abstract

In this work, light-addressable potentiometric sensor (LAPS) has been investigated for fluoride (F-) sensing in aqueous medium. Vacuum-evaporated LaF3 has been studied as the fluoride-sensing layer in the LAPS heterostructure. Instead of using the conventional structure of Si/SiO2/LaF3 or Si/SiO2/Si3N4/LaF3, a simple structure of Si/LaF3 has been prepared as the LAP fluoride-sensor. The sensor was prepared with 50 nm LaF3 layer on 300 μm Si. The sensor hardly shows fluoride-sensitivity without annealing, but it shows quite linear response in the range of pF1-5 with a sensitivity of ≈ 49 mV/pF for LaF3 layer annealed at 400 °C for 10 min. From the experimental result it appears that Si/LaF3 structure can be used for the sensing and imaging the distribution of fluoride ion in aqueous medium.

Original languageEnglish
Pages (from-to)94-97
Number of pages4
JournalSensors and Actuators, B: Chemical
Volume86
Issue number1
DOIs
Publication statusPublished - 2002 Aug 30
Externally publishedYes

Keywords

  • Capacitive EIS structure
  • Fluoride-sensor
  • Light-addressable potentiometric sensor (LAPS)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry

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