Lifetime prediction of stress induced voiding failure by novel numerical analysis in Cu interconnects with an ultra low-k dielectric

Shota Nakajima, Takenao Nemoto, A. Toshimitsu Yokobori

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

Newly developed computer aided numerical analysis by using the finite difference analysis (FDA) for vacancy concentration combined with the finite elemental analysis (FEA) for stress distribution was proposed to simulate time sequential change of vacancy concentration by stress induced voiding (SIV) and to predict a lifetime. Comparing of results obtained by computer simulation with those by experimental results, the developed numerical analysis was found to enable to simulate SIV phenomenon. The proposed numerical analysis is also possible to obtain the method of improvement on the SIV life time by optimum stress distribution and vacancy diffusivity.

Original languageEnglish
Title of host publicationAdvanced Metallization Conference 2008, AMC 2008
Pages751-755
Number of pages5
Publication statusPublished - 2009
Externally publishedYes
EventAdvanced Metallization Conference 2008, AMC 2008 - San Diego, CA, United States
Duration: 2008 Sep 232008 Sep 25

Publication series

NameAdvanced Metallization Conference (AMC)
ISSN (Print)1540-1766

Other

OtherAdvanced Metallization Conference 2008, AMC 2008
Country/TerritoryUnited States
CitySan Diego, CA
Period08/9/2308/9/25

ASJC Scopus subject areas

  • Materials Science(all)
  • Industrial and Manufacturing Engineering

Fingerprint

Dive into the research topics of 'Lifetime prediction of stress induced voiding failure by novel numerical analysis in Cu interconnects with an ultra low-k dielectric'. Together they form a unique fingerprint.

Cite this