Lifetime prediction of stress induced voiding failure by novel numerical analysis in Cu interconnects with an ultra low-k dielectric

Shota Nakajima, Takenao Nemoto, Toshimitsu Yokobori

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    4 Citations (Scopus)

    Abstract

    Newly developed computer aided numerical analysis by using the finite difference analysis (FDA) for vacancy concentration combined with the finite elemental analysis (FEA) for stress distribution was proposed to simulate time sequential change of vacancy concentration by stress induced voiding (SIV) and to predict a lifetime. Comparing of results obtained by computer simulation with those by experimental results, the developed numerical analysis was found to enable to simulate SIV phenomenon. The proposed numerical analysis is also possible to obtain the method of improvement on the SIV life time by optimum stress distribution and vacancy diffusivity.

    Original languageEnglish
    Title of host publicationAdvanced Metallization Conference 2008, AMC 2008
    Pages751-755
    Number of pages5
    Publication statusPublished - 2009 Oct 19
    EventAdvanced Metallization Conference 2008, AMC 2008 - San Diego, CA, United States
    Duration: 2008 Sep 232008 Sep 25

    Publication series

    NameAdvanced Metallization Conference (AMC)
    ISSN (Print)1540-1766

    Other

    OtherAdvanced Metallization Conference 2008, AMC 2008
    CountryUnited States
    CitySan Diego, CA
    Period08/9/2308/9/25

    ASJC Scopus subject areas

    • Materials Science(all)
    • Industrial and Manufacturing Engineering

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