We investigate the transport of electrons through a double-barrier resonant-tunneling structure in the regime where the current-voltage characteristics exhibit bistability. In this regime one of the states is metastable, and the system eventually switches from it to the stable state. We show that the mean switching time (formula presented) grows exponentially as the voltage V across the device is tuned from the boundary value (formula presented) into the bistable region. In samples of small area we find (formula presented) while in larger samples (formula presented).
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|Publication status||Published - 2003 Feb 14|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics