Lens-integrated asymmetric-dual-grating-gate high-electron-mobility-transistor for plasmonic terahertz detection

Tomotaka Hosotani, Fuzuki Kasuya, Hiroki Taniguchi, Takayuki Watanabe, Tetsuya Suemitsu, Taiichi Otsuji, Tadao Ishibashi, Makoto Shimizu, Akira Satou

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Asymmetric-dual-grating-gate high-electron-mobility-transistors (ADGG-HEMTs) are expected for high responsivity, room-temperature operating, and high-speed THz detectors. However, their low light coupling efficiency is one of the serious concerns because of the large focused spot size of free-space THz waves. To improve this, we examine shrinking the THz wave spot size by integrating a detector with a hyper-hemispherical silicon lens. We report the 6-fold enhancement of the coupling efficiency by the silicon lens integration. Also, we show that the dependence of the detector module responsivity on incident THz wave frequency is given by the product of the internal responsivity of ADGG-HEMTs and the light coupling efficiency owing to the silicon lens.

Original languageEnglish
Title of host publication2017 IEEE MTT-S International Microwave Symposium, IMS 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages578-581
Number of pages4
ISBN (Electronic)9781509063604
DOIs
Publication statusPublished - 2017 Oct 4
Event2017 IEEE MTT-S International Microwave Symposium, IMS 2017 - Honololu, United States
Duration: 2017 Jun 42017 Jun 9

Publication series

NameIEEE MTT-S International Microwave Symposium Digest
ISSN (Print)0149-645X

Other

Other2017 IEEE MTT-S International Microwave Symposium, IMS 2017
CountryUnited States
CityHonololu
Period17/6/417/6/9

Keywords

  • HEMT
  • Plasmon
  • Si lens
  • THz detector

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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