@inproceedings{c8788c17802e41d598958447e9e00fc6,
title = "Lens-integrated asymmetric-dual-grating-gate high-electron-mobility-transistor for plasmonic terahertz detection",
abstract = "Asymmetric-dual-grating-gate high-electron-mobility-transistors (ADGG-HEMTs) are expected for high responsivity, room-temperature operating, and high-speed THz detectors. However, their low light coupling efficiency is one of the serious concerns because of the large focused spot size of free-space THz waves. To improve this, we examine shrinking the THz wave spot size by integrating a detector with a hyper-hemispherical silicon lens. We report the 6-fold enhancement of the coupling efficiency by the silicon lens integration. Also, we show that the dependence of the detector module responsivity on incident THz wave frequency is given by the product of the internal responsivity of ADGG-HEMTs and the light coupling efficiency owing to the silicon lens.",
keywords = "HEMT, Plasmon, Si lens, THz detector",
author = "Tomotaka Hosotani and Fuzuki Kasuya and Hiroki Taniguchi and Takayuki Watanabe and Tetsuya Suemitsu and Taiichi Otsuji and Tadao Ishibashi and Makoto Shimizu and Akira Satou",
year = "2017",
month = oct,
day = "4",
doi = "10.1109/MWSYM.2017.8058632",
language = "English",
series = "IEEE MTT-S International Microwave Symposium Digest",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "578--581",
booktitle = "2017 IEEE MTT-S International Microwave Symposium, IMS 2017",
note = "2017 IEEE MTT-S International Microwave Symposium, IMS 2017 ; Conference date: 04-06-2017 Through 09-06-2017",
}