TY - GEN
T1 - Lens-integrated asymmetric-dual-grating-gate high-electron-mobility-transistor for plasmonic terahertz detection
AU - Hosotani, Tomotaka
AU - Kasuya, Fuzuki
AU - Taniguchi, Hiroki
AU - Watanabe, Takayuki
AU - Suemitsu, Tetsuya
AU - Otsuji, Taiichi
AU - Ishibashi, Tadao
AU - Shimizu, Makoto
AU - Satou, Akira
N1 - Funding Information:
This work was financially supported by SCOPE (No. 145002001), Japan, JST-ANR “WITH”, Japan, the Murata Science Foundation, Japan, and “R&D project on carrier-conversion technology with high environmental tolerance Research and System demonstration on high capacity O/E and E/O carrier-conversion technology for next generation wireless and wired networks” of the Commissioned Research of National Institute of Information and Communications Technology (NICT), Japan. The authors thank NTT-AT Corp. for cooperation in processing the sample fabrication.
Publisher Copyright:
© 2017 IEEE.
PY - 2017/10/4
Y1 - 2017/10/4
N2 - Asymmetric-dual-grating-gate high-electron-mobility-transistors (ADGG-HEMTs) are expected for high responsivity, room-temperature operating, and high-speed THz detectors. However, their low light coupling efficiency is one of the serious concerns because of the large focused spot size of free-space THz waves. To improve this, we examine shrinking the THz wave spot size by integrating a detector with a hyper-hemispherical silicon lens. We report the 6-fold enhancement of the coupling efficiency by the silicon lens integration. Also, we show that the dependence of the detector module responsivity on incident THz wave frequency is given by the product of the internal responsivity of ADGG-HEMTs and the light coupling efficiency owing to the silicon lens.
AB - Asymmetric-dual-grating-gate high-electron-mobility-transistors (ADGG-HEMTs) are expected for high responsivity, room-temperature operating, and high-speed THz detectors. However, their low light coupling efficiency is one of the serious concerns because of the large focused spot size of free-space THz waves. To improve this, we examine shrinking the THz wave spot size by integrating a detector with a hyper-hemispherical silicon lens. We report the 6-fold enhancement of the coupling efficiency by the silicon lens integration. Also, we show that the dependence of the detector module responsivity on incident THz wave frequency is given by the product of the internal responsivity of ADGG-HEMTs and the light coupling efficiency owing to the silicon lens.
KW - HEMT
KW - Plasmon
KW - Si lens
KW - THz detector
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U2 - 10.1109/MWSYM.2017.8058632
DO - 10.1109/MWSYM.2017.8058632
M3 - Conference contribution
AN - SCOPUS:85032505092
T3 - IEEE MTT-S International Microwave Symposium Digest
SP - 578
EP - 581
BT - 2017 IEEE MTT-S International Microwave Symposium, IMS 2017
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2017 IEEE MTT-S International Microwave Symposium, IMS 2017
Y2 - 4 June 2017 through 9 June 2017
ER -