TY - JOUR
T1 - Leakage current under high electric fields and magnetic properties in Co and Mn co-substituted BiFeO3 polycrystalline films
AU - Miura, Jun
AU - Nakajima, Takashi
AU - Naganuma, Hiroshi
AU - Okamura, Soichiro
N1 - Funding Information:
This work was partly supported by a Grant-in-Aid for Challenging Exploratory Research (Grant No. 23656025 ), by Grants-in-Aid for Scientific Research, and the Elements Science and Technology Project from the Ministry of Education, Culture, Sports, Science, and Technology of Japan , by Strategic International Cooperative Program (Joint Research Type), Japan Science and Technology Agency “Advanced spintronic materials and transport phenomena (ASPIMATT)”, New Energy and Industrial Technology Development Organization (NEDO) grant, and by research grant from TANAKA HOLDINGS Co. Ltd. I would like to express my gratitude to Dr. Kurita for preparing the bottom Pt electrode used in this study.
PY - 2014/5/2
Y1 - 2014/5/2
N2 - Co and Mn co-substituted BiFeO3 films were prepared on Pt/Ti/SiO2/Si(100) substrates, and the effect of co-substitution on the structural, electric, and magnetic properties of the prepared films was systematically investigated. Cross-sectional transmission electron microscopy observations showed that the films were homogeneous; moreover, no magnetic secondary phases were observed in the films. Nano-beam energy-dispersive X-ray spectroscopy, carried out at various points in the films, revealed that Co and Mn were distributed in the films. Further, the average concentration of Bi, Co, Mn, and Fe was 59, 2, 2, and 37 at.%, respectively; these values were almost consistent with the nominal composition of the precursor solution used. X-ray diffraction profiles of the films showed that the (012)-d-spacing decreased and (104) and (110) peaks merged into a single peak with increasing co-substitution content. The leakage current in films under high electric fields drastically decreased upon co-substitution without any degradation of ferroelectricity; moreover, this effect was also observed for single Mn-substituted materials. Saturation magnetization of the films monotonically increased with the co-substitution content, and this increase was quantitatively identical to that in the case of single Co-substituted materials. These results indicate that Co and Mn play significant roles in determining the properties of co-substituted BiFeO3 films.
AB - Co and Mn co-substituted BiFeO3 films were prepared on Pt/Ti/SiO2/Si(100) substrates, and the effect of co-substitution on the structural, electric, and magnetic properties of the prepared films was systematically investigated. Cross-sectional transmission electron microscopy observations showed that the films were homogeneous; moreover, no magnetic secondary phases were observed in the films. Nano-beam energy-dispersive X-ray spectroscopy, carried out at various points in the films, revealed that Co and Mn were distributed in the films. Further, the average concentration of Bi, Co, Mn, and Fe was 59, 2, 2, and 37 at.%, respectively; these values were almost consistent with the nominal composition of the precursor solution used. X-ray diffraction profiles of the films showed that the (012)-d-spacing decreased and (104) and (110) peaks merged into a single peak with increasing co-substitution content. The leakage current in films under high electric fields drastically decreased upon co-substitution without any degradation of ferroelectricity; moreover, this effect was also observed for single Mn-substituted materials. Saturation magnetization of the films monotonically increased with the co-substitution content, and this increase was quantitatively identical to that in the case of single Co-substituted materials. These results indicate that Co and Mn play significant roles in determining the properties of co-substituted BiFeO3 films.
KW - Bismuth ferrite
KW - Chemical solution deposition
KW - Cobalt
KW - Manganese
KW - Multiferroics
KW - Substitution
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U2 - 10.1016/j.tsf.2014.03.046
DO - 10.1016/j.tsf.2014.03.046
M3 - Article
AN - SCOPUS:84898804367
VL - 558
SP - 194
EP - 199
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
ER -