Leakage current property of Pb(Zr0.4,Ti0.6)O 3 thin-film capacitors with highly rectangular hysteresis property

Soichiro Okamura, Mitsumasa Tanimura, Hiromi Shima, Hiroshi Naganuma

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The Pb(Zr0 4,Ti0 6)O3 thin-film capacitors with top and bottom Pt electrodes were prepared by chemical solution deposition using the precursor solutions with Pb contents ranging from 104 to 119%. Leakage current densities of the PZT capacitors monotonically decreased with increasing Pb contents. In the Pb110%-PZT capacitor, a conduction mechanism changed from the Schottky emission to the Poole-Frenkel at an electric field of approximately 80 kV/cm at RT while the leakage current was limited only by the Poole-Frenkel in case of less Pb contents. In the Pb110%-PZT capacitor, the Schottky barrier height and a relative permittivity were estimated to be 1.1 eV and 4.8, respectively, and the activation energy of trap sites in the Poole-Frenkel conduction was estimated to be 0.5 eV.

Original languageEnglish
Title of host publication2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF
Pages91-93
Number of pages3
DOIs
Publication statusPublished - 2007 Dec 1
Externally publishedYes
Event2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF - Nara-city, Japan
Duration: 2007 May 272007 May 31

Publication series

NameIEEE International Symposium on Applications of Ferroelectrics

Other

Other2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF
CountryJapan
CityNara-city
Period07/5/2707/5/31

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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  • Cite this

    Okamura, S., Tanimura, M., Shima, H., & Naganuma, H. (2007). Leakage current property of Pb(Zr0.4,Ti0.6)O 3 thin-film capacitors with highly rectangular hysteresis property. In 2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF (pp. 91-93). [4393176] (IEEE International Symposium on Applications of Ferroelectrics). https://doi.org/10.1109/ISAF.2007.4393176