Leakage current mechanism of polycrystalline BiFeO3 films with pt electrode

Hiroshi Naganuma, Yosuke Inoue, Soichiro Okamura

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Leakage current mechanism of the polycrystalline BiFeO3 film annealing at 923 K with Pt electrodes was discussed based on Schottky-emission conduction, Poole-Frenkel trap limited conduction, Fowler-Nordheim tunneling conduction and space charge limited current (SCLC). The leakage current mechanism at room temperature is as follows; Schottky-emission or Ppole-Frenkel was the candidate leakage current mechanism at low electric field and then leakage current mechanism was changed to the SCLC at high electric field. When decreasing the measuring temperature, the leakage current mechanism at low electric field was Poole-Frenkel trap limited conduction, though the electric field region of the PF trap limited conduction was much broader than that of the room temperature.

Original languageEnglish
Pages (from-to)242-247
Number of pages6
JournalIntegrated Ferroelectrics
Volume95
Issue number1
DOIs
Publication statusPublished - 2007 Dec 1
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Control and Systems Engineering
  • Ceramics and Composites
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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