Layer-by-layer oxidation of silicon

T. Hattori, K. Takahashi, H. Nohira, T. Ohmi

    Research output: Contribution to journalConference articlepeer-review

    Abstract

    The layer-by-layer oxidation reaction occurs at the interface as a result of periodic changes in bonding nature of Si crystal at the interface. The layer-by-layer oxidation reaction are reflected in the morphology of oxide surface, distribution of interface states in silicon bandgap, valence band discontinuity at SiO2/Si interface, chemical shift of Si 2p spectrum for silicon oxide from that for bulk Si, and oxidation rate.

    Original languageEnglish
    Pages (from-to)139-144
    Number of pages6
    JournalDiffusion and Defect Data Pt.B: Solid State Phenomena
    Volume76-77
    Publication statusPublished - 2000 Dec 1
    Event5th Internatinal Symposium on Ultra Clean Processing of Silicon Surfaces (UCPSS 2000) - Ostend, Belgium
    Duration: 2000 Sep 182000 Sep 20

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Materials Science(all)
    • Condensed Matter Physics
    • Physics and Astronomy (miscellaneous)

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