Layer-by-layer growth of Ag on a GaN(0001) surface

Kehui Wu; Q. Z. Xue; R. Z. Bakhtizin; Y. Fujikawa; X. Li; T. Nagao; Q. K. Xue; T. Sakurai

doi:10.1063/1.1556572

Layer-by-layer growth of Ag on a GaN(0001) surface

Kehui Wu, Q. Z. Xue, R. Z. Bakhtizin, Y. Fujikawa, X. Li, T. Nagao, Q. K. Xue, T. Sakurai

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

A drastic change of the Ag growth mode on the bulk-terminated GaN(0001) surface, from Stranski-Krastanov (SK) growth at a low Ag flux to layer-by-layer growth at a high flux was observed. An approach was demonstrated to obtain a flat epitaxial Ag film on the GaN(0001) surface, using the high Ag flux. An unreconstructed Ag-terminated GaN(0001)-1×1 surface was also obtained by annealing the Ag film-covered GaN(0001) surface.

Original language	English
Pages (from-to)	1389-1391
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	9
DOIs	https://doi.org/10.1063/1.1556572
Publication status	Published - 2003 Mar 3
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.1556572

Cite this

@article{62bed1e0982f4fcaad96dfec6c8bae29,

title = "Layer-by-layer growth of Ag on a GaN(0001) surface",

abstract = "A drastic change of the Ag growth mode on the bulk-terminated GaN(0001) surface, from Stranski-Krastanov (SK) growth at a low Ag flux to layer-by-layer growth at a high flux was observed. An approach was demonstrated to obtain a flat epitaxial Ag film on the GaN(0001) surface, using the high Ag flux. An unreconstructed Ag-terminated GaN(0001)-1×1 surface was also obtained by annealing the Ag film-covered GaN(0001) surface.",

author = "Kehui Wu and Xue, {Q. Z.} and Bakhtizin, {R. Z.} and Y. Fujikawa and X. Li and T. Nagao and Xue, {Q. K.} and T. Sakurai",

year = "2003",

month = mar,

day = "3",

doi = "10.1063/1.1556572",

language = "English",

volume = "82",

pages = "1389--1391",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "9",

}

TY - JOUR

T1 - Layer-by-layer growth of Ag on a GaN(0001) surface

AU - Wu, Kehui

AU - Xue, Q. Z.

AU - Bakhtizin, R. Z.

AU - Fujikawa, Y.

AU - Li, X.

AU - Nagao, T.

AU - Xue, Q. K.

AU - Sakurai, T.

PY - 2003/3/3

Y1 - 2003/3/3

N2 - A drastic change of the Ag growth mode on the bulk-terminated GaN(0001) surface, from Stranski-Krastanov (SK) growth at a low Ag flux to layer-by-layer growth at a high flux was observed. An approach was demonstrated to obtain a flat epitaxial Ag film on the GaN(0001) surface, using the high Ag flux. An unreconstructed Ag-terminated GaN(0001)-1×1 surface was also obtained by annealing the Ag film-covered GaN(0001) surface.

AB - A drastic change of the Ag growth mode on the bulk-terminated GaN(0001) surface, from Stranski-Krastanov (SK) growth at a low Ag flux to layer-by-layer growth at a high flux was observed. An approach was demonstrated to obtain a flat epitaxial Ag film on the GaN(0001) surface, using the high Ag flux. An unreconstructed Ag-terminated GaN(0001)-1×1 surface was also obtained by annealing the Ag film-covered GaN(0001) surface.

UR - http://www.scopus.com/inward/record.url?scp=0037416604&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037416604&partnerID=8YFLogxK

U2 - 10.1063/1.1556572

DO - 10.1063/1.1556572

M3 - Article

AN - SCOPUS:0037416604

VL - 82

SP - 1389

EP - 1391

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 9

ER -

Layer-by-layer growth of Ag on a GaN(0001) surface

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this