Abstract
A drastic change of the Ag growth mode on the bulk-terminated GaN(0001) surface, from Stranski-Krastanov (SK) growth at a low Ag flux to layer-by-layer growth at a high flux was observed. An approach was demonstrated to obtain a flat epitaxial Ag film on the GaN(0001) surface, using the high Ag flux. An unreconstructed Ag-terminated GaN(0001)-1×1 surface was also obtained by annealing the Ag film-covered GaN(0001) surface.
Original language | English |
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Pages (from-to) | 1389-1391 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 82 |
Issue number | 9 |
DOIs | |
Publication status | Published - 2003 Mar 3 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)