Layer-by-layer growth of Ag on a GaN(0001) surface

Kehui Wu, Q. Z. Xue, R. Z. Bakhtizin, Y. Fujikawa, X. Li, T. Nagao, Q. K. Xue, T. Sakurai

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

A drastic change of the Ag growth mode on the bulk-terminated GaN(0001) surface, from Stranski-Krastanov (SK) growth at a low Ag flux to layer-by-layer growth at a high flux was observed. An approach was demonstrated to obtain a flat epitaxial Ag film on the GaN(0001) surface, using the high Ag flux. An unreconstructed Ag-terminated GaN(0001)-1×1 surface was also obtained by annealing the Ag film-covered GaN(0001) surface.

Original languageEnglish
Pages (from-to)1389-1391
Number of pages3
JournalApplied Physics Letters
Volume82
Issue number9
DOIs
Publication statusPublished - 2003 Mar 3
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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