Lattice strain relaxation at the initial stages of heteroepitaxy of GaAs on (100)Si by molecular beam epitaxy

Takafumi Yao, Hiroshi Nakao, Hitoshi Kawanami, Ryuichi Toba

Research output: Contribution to journalArticlepeer-review

19 Citations (Scopus)

Abstract

The relaxation of lattice strain at the initial stages of heteroepitaxy of GaAs on (100)Si substrates grown either by molecular beam epitaxy or by migration enhanced epitaxy is studied using dynamic reflection high energy electron diffraction technique. The low temperature growth of GaAs layers was performed after depositing As prelayers on Si substrates at low temperature. The evolution of RHEED patterns, the variation of surface lattice parameter, and the variations of the intensity and half width of diffraction spots during growth are investigated. The relaxation of lattice occurs before the completion of one monolayer growth of GaAs. The critical thickness for the strain relaxation is much smaller than the calculated one. It is speculated that the misfit stress is accommodated by a faulted Si-As interface.

Original languageEnglish
Pages (from-to)107-112
Number of pages6
JournalJournal of Crystal Growth
Volume95
Issue number1-4
DOIs
Publication statusPublished - 1989 Feb 2

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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