Lattice parameter deviation of InP single crystals grown by the horizontal Bridgman method under controlled phosphorus vapor pressure

Atsushi Shimizu, Jun Ichi Nishizawa, Yutaka Oyama, Ken Suto

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

InP crystals were grown by the horizontal Bridgman method under controlled ambient phosphorus vapor pressure. The lattice parameter was measured by X-ray diffraction analysis. The lattice parameter of the InP crystals increased with increasing phosphorus vapor pressure. The relationship between the lattice parameter and composition indicates that the In-rich composition is attributed to the P-vacancies. This corresponds to the photoluminescence spectra of P-vacancy-related emission.

Original languageEnglish
Pages (from-to)2219-2220
Number of pages2
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume40
Issue number4 A
DOIs
Publication statusPublished - 2001 Apr

Keywords

  • Bridgman
  • InP
  • Lattice parameter
  • Phosphorus vapor pressure
  • Stoichiometry

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Lattice parameter deviation of InP single crystals grown by the horizontal Bridgman method under controlled phosphorus vapor pressure'. Together they form a unique fingerprint.

Cite this