Lattice parameter determination of a composition controlled Si 1-xGex layer on a Si (001) substrate using convergent-beam electron diffraction

Takayuki Akaogi, Kenji Tsuda, Masami Terauchi, Michiyoshi Tanaka

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

The six lattice parameters (a, b, c, α, β and γ) of Si1-xGex, which was grown epitaxially on a Si (001) substrate with a varying Ge concentration, were determined by convergent-beam electron diffraction (CBED) without any assumption of crystal lattice symmetry. It was revealed that the lattice parameter c of Si1-xGex varies linearly with the Ge concentration and that the lattice symmetry is lowered from cubic to tetragonal, excluding an artifact due to the thinning of the specimen. The effect of strain relaxation that is caused by thinning specimens is discussed. Ge concentrations of examined specimen areas are evaluated using the obtained lattice parameters.

Original languageEnglish
Pages (from-to)593-600
Number of pages8
JournalJournal of Electron Microscopy
Volume53
Issue number6
DOIs
Publication statusPublished - 2004

Keywords

  • Convergent-beam electron diffraction
  • Ge concentration
  • Lattice parameter determination
  • Lattice strain
  • SiGe
  • Strain relaxation

ASJC Scopus subject areas

  • Instrumentation

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