Lattice-matched magnetic tunnel junctions using a Heusler alloy Co2FeAl and a cation-disorder spinel Mg-Al-O barrier

Thomas Scheike; Hiroaki Sukegawa; Takao Furubayashi; Zhenchao Wen; Koichiro Inomata; Tadakatsu Ohkubo; Kazuhiro Hono; Seiji Mitani

doi:10.1063/1.4904716

Lattice-matched magnetic tunnel junctions using a Heusler alloy Co₂FeAl and a cation-disorder spinel Mg-Al-O barrier

Thomas Scheike, Hiroaki Sukegawa, Takao Furubayashi, Zhenchao Wen, Koichiro Inomata, Tadakatsu Ohkubo, Kazuhiro Hono, Seiji Mitani

Research output: Contribution to journal › Article › peer-review

35 Citations (Scopus)

Abstract

Perfectly lattice-matched magnetic tunnel junctions (MTJs) consisting of a Heusler alloy B2-Co₂FeAl (CFA) electrode and a cation-disorder spinel (Mg-Al-O) barrier were fabricated by sputtering and plasma oxidation. We achieved a large tunnel magnetoresistance (TMR) ratio of 228% at room temperature (RT) (398% at 5K) for the epitaxial CFA/MgAl-O/CoFe(001) MTJ, in which the effect of lattice defects on TMR ratios is excluded. With inserting a ultrathin (≤1.5 nm) CoFe layer between the CFA and Mg-Al-O, the TMR ratio further increased up to 280% at RT (453% at 5 K), which reflected the importance of controlling barrier-electrode interface states other than the lattice matching.

Original language	English
Article number	242407
Journal	Applied Physics Letters
Volume	105
Issue number	24
DOIs	https://doi.org/10.1063/1.4904716
Publication status	Published - 2014 Dec 15

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "Perfectly lattice-matched magnetic tunnel junctions (MTJs) consisting of a Heusler alloy B2-Co2FeAl (CFA) electrode and a cation-disorder spinel (Mg-Al-O) barrier were fabricated by sputtering and plasma oxidation. We achieved a large tunnel magnetoresistance (TMR) ratio of 228% at room temperature (RT) (398% at 5K) for the epitaxial CFA/MgAl-O/CoFe(001) MTJ, in which the effect of lattice defects on TMR ratios is excluded. With inserting a ultrathin (≤1.5 nm) CoFe layer between the CFA and Mg-Al-O, the TMR ratio further increased up to 280% at RT (453% at 5 K), which reflected the importance of controlling barrier-electrode interface states other than the lattice matching.",

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AU - Scheike, Thomas

AU - Sukegawa, Hiroaki

AU - Furubayashi, Takao

AU - Wen, Zhenchao

AU - Inomata, Koichiro

AU - Ohkubo, Tadakatsu

AU - Hono, Kazuhiro

AU - Mitani, Seiji

PY - 2014/12/15

Y1 - 2014/12/15

N2 - Perfectly lattice-matched magnetic tunnel junctions (MTJs) consisting of a Heusler alloy B2-Co2FeAl (CFA) electrode and a cation-disorder spinel (Mg-Al-O) barrier were fabricated by sputtering and plasma oxidation. We achieved a large tunnel magnetoresistance (TMR) ratio of 228% at room temperature (RT) (398% at 5K) for the epitaxial CFA/MgAl-O/CoFe(001) MTJ, in which the effect of lattice defects on TMR ratios is excluded. With inserting a ultrathin (≤1.5 nm) CoFe layer between the CFA and Mg-Al-O, the TMR ratio further increased up to 280% at RT (453% at 5 K), which reflected the importance of controlling barrier-electrode interface states other than the lattice matching.

AB - Perfectly lattice-matched magnetic tunnel junctions (MTJs) consisting of a Heusler alloy B2-Co2FeAl (CFA) electrode and a cation-disorder spinel (Mg-Al-O) barrier were fabricated by sputtering and plasma oxidation. We achieved a large tunnel magnetoresistance (TMR) ratio of 228% at room temperature (RT) (398% at 5K) for the epitaxial CFA/MgAl-O/CoFe(001) MTJ, in which the effect of lattice defects on TMR ratios is excluded. With inserting a ultrathin (≤1.5 nm) CoFe layer between the CFA and Mg-Al-O, the TMR ratio further increased up to 280% at RT (453% at 5 K), which reflected the importance of controlling barrier-electrode interface states other than the lattice matching.

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Lattice-matched magnetic tunnel junctions using a Heusler alloy Co₂FeAl and a cation-disorder spinel Mg-Al-O barrier

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