Lattice-matched epitaxial growth of single crystalline 3C-SiC on 6H-SiC substrates by gas source molecular beam epitaxy

Tatsuo Yoshinobu, Hideaki Mitsui, Iwao Izumikawa, Takashi Fuyuki, Hiroyuki Matsunami

Research output: Contribution to journalArticle

35 Citations (Scopus)

Abstract

Lattice-matched epitaxial growth of 3C-SiC on 6H-SiC substrates using an alternate supply of disilane (Si2H6) and acetylene (C 2H2) gas molecular beams in a high vacuum was carried out. On 6H-SiC(0001̄) substrates, epilayers of 3C-SiC(1̄1̄1̄) with a double-positioning twin structure were obtained. On the other hand, single crystalline 3C-SiC(001) epilayers without twin structure were obtained on 6H-SiC(01̄14̄) substrates even at low temperatures down to 850°C.

Original languageEnglish
Pages (from-to)824-826
Number of pages3
JournalApplied Physics Letters
Volume60
Issue number7
DOIs
Publication statusPublished - 1992 Dec 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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