Channeling experiments using the D(3He, p)4He nuclear reaction are carried out to study the lattice location of deuterium as well as the radiation-induced defects in TiC. Deuterium ions with an energy of 5 keV are implanted into TiC0.77 and TiC0.96 single crystals at room temperature. The implanted D atoms are found in the intrinsic vacancies of the carbon sublattice associated with the nonstoichiometry. For high fluences (1.5 × 1017 D/cm2), however, D atoms are trapped at defects produced by the implantation.
ASJC Scopus subject areas
- Nuclear and High Energy Physics