Lattice location of deuterium implanted in TiC

S. Nagata, S. Yamaguchi, H. Naramoto, Y. Kazumata

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


Channeling experiments using the D(3He, p)4He nuclear reaction are carried out to study the lattice location of deuterium as well as the radiation-induced defects in TiC. Deuterium ions with an energy of 5 keV are implanted into TiC0.77 and TiC0.96 single crystals at room temperature. The implanted D atoms are found in the intrinsic vacancies of the carbon sublattice associated with the nonstoichiometry. For high fluences (1.5 × 1017 D/cm2), however, D atoms are trapped at defects produced by the implantation.

Original languageEnglish
Pages (from-to)231-234
Number of pages4
JournalNuclear Inst. and Methods in Physics Research, B
Issue number1-4
Publication statusPublished - 1990 Mar 2

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation


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