Lattice-latching effect in metalorganic vapor phase epitaxy growth of InGaAsN film lattice-matched to bulk InGaAs substrate

The effects of lattice mismatch between an InzGa1zAs bulk substrate and an InxGa10xAs10yNy epilayer on the incorporation kinetics of N (y) and In (x) were investigated. Compositions x; yp were revealed to be pinned by the substrate to those satisfying lattice-matching conditions. With decreasing In (z) content in the substrate, the incorporation of N is spontaneously enhanced. On the other hand, the In content of the layer is reduced to decrese the deformation energy due to the lattice mismatch. On the basis of our results, thick InxGa1-xAs1-yNy (0:289 < x < 0:312 and 0:009 < y < 0:014) layers exhibiting photoluminescence in the wavelength range of 1.3 -1.55 mm were observed to grow owing to the "latticelatching" effect.