Lattice-latching effect in metalorganic vapor phase epitaxy growth of InGaAsN film lattice-matched to bulk InGaAs substrate

Sakuntam Sanorpim; Ryuji Katayama; Kentaro Onabe; Noritaka Usami; Kazuo Nakajima

doi:10.1143/JJAP.49.040202

Lattice-latching effect in metalorganic vapor phase epitaxy growth of InGaAsN film lattice-matched to bulk InGaAs substrate

Sakuntam Sanorpim, Ryuji Katayama, Kentaro Onabe, Noritaka Usami, Kazuo Nakajima

Materials Design Division

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The effects of lattice mismatch between an InzGa1zAs bulk substrate and an InxGa10xAs10yNy epilayer on the incorporation kinetics of N (y) and In (x) were investigated. Compositions x; yp were revealed to be pinned by the substrate to those satisfying lattice-matching conditions. With decreasing In (z) content in the substrate, the incorporation of N is spontaneously enhanced. On the other hand, the In content of the layer is reduced to decrese the deformation energy due to the lattice mismatch. On the basis of our results, thick InxGa1-xAs1-yNy (0:289 < x < 0:312 and 0:009 < y < 0:014) layers exhibiting photoluminescence in the wavelength range of 1.3 -1.55 mm were observed to grow owing to the "latticelatching" effect.

Original language	English
Pages (from-to)	402021-402023
Number of pages	3
Journal	Japanese journal of applied physics
Volume	49
Issue number	4 PART 1
DOIs	https://doi.org/10.1143/JJAP.49.040202
Publication status	Published - 2010 Apr 1

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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Lattice-latching effect in metalorganic vapor phase epitaxy growth of InGaAsN film lattice-matched to bulk InGaAs substrate. / Sanorpim, Sakuntam; Katayama, Ryuji; Onabe, Kentaro; Usami, Noritaka; Nakajima, Kazuo.

In: Japanese journal of applied physics, Vol. 49, No. 4 PART 1, 01.04.2010, p. 402021-402023.

Research output: Contribution to journal › Article › peer-review

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title = "Lattice-latching effect in metalorganic vapor phase epitaxy growth of InGaAsN film lattice-matched to bulk InGaAs substrate",

abstract = "The effects of lattice mismatch between an InzGa1zAs bulk substrate and an InxGa10xAs10yNy epilayer on the incorporation kinetics of N (y) and In (x) were investigated. Compositions x; yp were revealed to be pinned by the substrate to those satisfying lattice-matching conditions. With decreasing In (z) content in the substrate, the incorporation of N is spontaneously enhanced. On the other hand, the In content of the layer is reduced to decrese the deformation energy due to the lattice mismatch. On the basis of our results, thick InxGa1-xAs1-yNy (0:289 < x < 0:312 and 0:009 < y < 0:014) layers exhibiting photoluminescence in the wavelength range of 1.3 -1.55 mm were observed to grow owing to the {"}latticelatching{"} effect.",

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T1 - Lattice-latching effect in metalorganic vapor phase epitaxy growth of InGaAsN film lattice-matched to bulk InGaAs substrate

AU - Sanorpim, Sakuntam

AU - Katayama, Ryuji

AU - Onabe, Kentaro

AU - Usami, Noritaka

AU - Nakajima, Kazuo

PY - 2010/4/1

Y1 - 2010/4/1

N2 - The effects of lattice mismatch between an InzGa1zAs bulk substrate and an InxGa10xAs10yNy epilayer on the incorporation kinetics of N (y) and In (x) were investigated. Compositions x; yp were revealed to be pinned by the substrate to those satisfying lattice-matching conditions. With decreasing In (z) content in the substrate, the incorporation of N is spontaneously enhanced. On the other hand, the In content of the layer is reduced to decrese the deformation energy due to the lattice mismatch. On the basis of our results, thick InxGa1-xAs1-yNy (0:289 < x < 0:312 and 0:009 < y < 0:014) layers exhibiting photoluminescence in the wavelength range of 1.3 -1.55 mm were observed to grow owing to the "latticelatching" effect.

AB - The effects of lattice mismatch between an InzGa1zAs bulk substrate and an InxGa10xAs10yNy epilayer on the incorporation kinetics of N (y) and In (x) were investigated. Compositions x; yp were revealed to be pinned by the substrate to those satisfying lattice-matching conditions. With decreasing In (z) content in the substrate, the incorporation of N is spontaneously enhanced. On the other hand, the In content of the layer is reduced to decrese the deformation energy due to the lattice mismatch. On the basis of our results, thick InxGa1-xAs1-yNy (0:289 < x < 0:312 and 0:009 < y < 0:014) layers exhibiting photoluminescence in the wavelength range of 1.3 -1.55 mm were observed to grow owing to the "latticelatching" effect.

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