Lattice distortion at SiO2/Si(001) interface studied with high-resolution rutherford backscattering spectroscopy/channeling

Kaoru Nakajima, Motofumi Suzuki, Kenji Kimura, Masashi Yamamoto, Akinobu Teramoto, Tadahiro Ohmi, Takeo Hattori

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)


The growth-temperature dependence of the transition structure at the SiO2/Si interface is studied by high-resolution Rutherford backscattering spectroscopy/channeling. A Si lattice distortion is found at the interface. Such distortion propagates more than 2 nm from the interface. It is shown that the SiO2/Si grown by wet oxidation at 1100°C has a smaller lattice distortion than that grown at 900°C. This can be explained in terms of the relaxation of the strained SiO2 network caused by the viscous flow of SiO2 at high temperatures.

Original languageEnglish
Pages (from-to)2467-2469
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number4 A
Publication statusPublished - 2006 Apr 7


  • Channeling
  • High-resolution RBS
  • Interface
  • Lattice distortion
  • SiO
  • Silicon

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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