Lattice distortion at SiO2/Si(001) interface studied with high-resolution rutherford backscattering spectroscopy/channeling

Kaoru Nakajima; Motofumi Suzuki; Kenji Kimura; Masashi Yamamoto; Akinobu Teramoto; Tadahiro Ohmi; Takeo Hattori

doi:10.1143/JJAP.45.2467

Lattice distortion at SiO₂/Si(001) interface studied with high-resolution rutherford backscattering spectroscopy/channeling

Kaoru Nakajima, Motofumi Suzuki, Kenji Kimura, Masashi Yamamoto, Akinobu Teramoto, Tadahiro Ohmi, Takeo Hattori

New Industry Creation Hatchery Center (NICHe)

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

The growth-temperature dependence of the transition structure at the SiO₂/Si interface is studied by high-resolution Rutherford backscattering spectroscopy/channeling. A Si lattice distortion is found at the interface. Such distortion propagates more than 2 nm from the interface. It is shown that the SiO₂/Si grown by wet oxidation at 1100°C has a smaller lattice distortion than that grown at 900°C. This can be explained in terms of the relaxation of the strained SiO₂ network caused by the viscous flow of SiO₂ at high temperatures.

Original language	English
Pages (from-to)	2467-2469
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	45
Issue number	4 A
DOIs	https://doi.org/10.1143/JJAP.45.2467
Publication status	Published - 2006 Apr 7

Keywords

Channeling
High-resolution RBS
Interface
Lattice distortion
SiO
Silicon

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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Nakajima, K., Suzuki, M., Kimura, K., Yamamoto, M., Teramoto, A., Ohmi, T., & Hattori, T. (2006). Lattice distortion at SiO₂/Si(001) interface studied with high-resolution rutherford backscattering spectroscopy/channeling. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 45(4 A), 2467-2469. https://doi.org/10.1143/JJAP.45.2467

Lattice distortion at SiO₂/Si(001) interface studied with high-resolution rutherford backscattering spectroscopy/channeling. / Nakajima, Kaoru; Suzuki, Motofumi; Kimura, Kenji; Yamamoto, Masashi; Teramoto, Akinobu; Ohmi, Tadahiro; Hattori, Takeo.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 45, No. 4 A, 07.04.2006, p. 2467-2469.

Research output: Contribution to journal › Article › peer-review

Nakajima, K, Suzuki, M, Kimura, K, Yamamoto, M, Teramoto, A, Ohmi, T & Hattori, T 2006, 'Lattice distortion at SiO₂/Si(001) interface studied with high-resolution rutherford backscattering spectroscopy/channeling', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 45, no. 4 A, pp. 2467-2469. https://doi.org/10.1143/JJAP.45.2467

Nakajima, Kaoru ; Suzuki, Motofumi ; Kimura, Kenji ; Yamamoto, Masashi ; Teramoto, Akinobu ; Ohmi, Tadahiro ; Hattori, Takeo. / Lattice distortion at SiO₂/Si(001) interface studied with high-resolution rutherford backscattering spectroscopy/channeling. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2006 ; Vol. 45, No. 4 A. pp. 2467-2469.

@article{a2c9179245244b5b963f6e3942725598,

title = "Lattice distortion at SiO2/Si(001) interface studied with high-resolution rutherford backscattering spectroscopy/channeling",

abstract = "The growth-temperature dependence of the transition structure at the SiO2/Si interface is studied by high-resolution Rutherford backscattering spectroscopy/channeling. A Si lattice distortion is found at the interface. Such distortion propagates more than 2 nm from the interface. It is shown that the SiO2/Si grown by wet oxidation at 1100°C has a smaller lattice distortion than that grown at 900°C. This can be explained in terms of the relaxation of the strained SiO2 network caused by the viscous flow of SiO2 at high temperatures.",

keywords = "Channeling, High-resolution RBS, Interface, Lattice distortion, SiO, Silicon",

author = "Kaoru Nakajima and Motofumi Suzuki and Kenji Kimura and Masashi Yamamoto and Akinobu Teramoto and Tadahiro Ohmi and Takeo Hattori",

year = "2006",

month = apr,

day = "7",

doi = "10.1143/JJAP.45.2467",

language = "English",

volume = "45",

pages = "2467--2469",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "4 A",

}

TY - JOUR

T1 - Lattice distortion at SiO2/Si(001) interface studied with high-resolution rutherford backscattering spectroscopy/channeling

AU - Nakajima, Kaoru

AU - Suzuki, Motofumi

AU - Kimura, Kenji

AU - Yamamoto, Masashi

AU - Teramoto, Akinobu

AU - Ohmi, Tadahiro

AU - Hattori, Takeo

PY - 2006/4/7

Y1 - 2006/4/7

N2 - The growth-temperature dependence of the transition structure at the SiO2/Si interface is studied by high-resolution Rutherford backscattering spectroscopy/channeling. A Si lattice distortion is found at the interface. Such distortion propagates more than 2 nm from the interface. It is shown that the SiO2/Si grown by wet oxidation at 1100°C has a smaller lattice distortion than that grown at 900°C. This can be explained in terms of the relaxation of the strained SiO2 network caused by the viscous flow of SiO2 at high temperatures.

AB - The growth-temperature dependence of the transition structure at the SiO2/Si interface is studied by high-resolution Rutherford backscattering spectroscopy/channeling. A Si lattice distortion is found at the interface. Such distortion propagates more than 2 nm from the interface. It is shown that the SiO2/Si grown by wet oxidation at 1100°C has a smaller lattice distortion than that grown at 900°C. This can be explained in terms of the relaxation of the strained SiO2 network caused by the viscous flow of SiO2 at high temperatures.

KW - Channeling

KW - High-resolution RBS

KW - Interface

KW - Lattice distortion

KW - SiO

KW - Silicon

UR - http://www.scopus.com/inward/record.url?scp=33645671983&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33645671983&partnerID=8YFLogxK

U2 - 10.1143/JJAP.45.2467

DO - 10.1143/JJAP.45.2467

M3 - Article

AN - SCOPUS:33645671983

VL - 45

SP - 2467

EP - 2469

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 4 A

ER -