Lattice distortion at SiO2/Si(001) interface studied with high-resolution rutherford backscattering spectroscopy/channeling

Kaoru Nakajima; Motofumi Suzuki; Kenji Kimura; Masashi Yamamoto; Akinobu Teramoto; Tadahiro Ohmi; Takeo Hattori

doi:10.1143/JJAP.45.2467

Lattice distortion at SiO₂/Si(001) interface studied with high-resolution rutherford backscattering spectroscopy/channeling

Kaoru Nakajima, Motofumi Suzuki, Kenji Kimura, Masashi Yamamoto, Akinobu Teramoto, Tadahiro Ohmi, Takeo Hattori

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

The growth-temperature dependence of the transition structure at the SiO₂/Si interface is studied by high-resolution Rutherford backscattering spectroscopy/channeling. A Si lattice distortion is found at the interface. Such distortion propagates more than 2 nm from the interface. It is shown that the SiO₂/Si grown by wet oxidation at 1100°C has a smaller lattice distortion than that grown at 900°C. This can be explained in terms of the relaxation of the strained SiO₂ network caused by the viscous flow of SiO₂ at high temperatures.

Original language	English
Pages (from-to)	2467-2469
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	45
Issue number	4 A
DOIs	https://doi.org/10.1143/JJAP.45.2467
Publication status	Published - 2006 Apr 7
Externally published	Yes

Keywords

Channeling
High-resolution RBS
Interface
Lattice distortion
SiO
Silicon

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/JJAP.45.2467

Cite this

Nakajima, K., Suzuki, M., Kimura, K., Yamamoto, M., Teramoto, A., Ohmi, T., & Hattori, T. (2006). Lattice distortion at SiO₂/Si(001) interface studied with high-resolution rutherford backscattering spectroscopy/channeling. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 45(4 A), 2467-2469. https://doi.org/10.1143/JJAP.45.2467

Lattice distortion at SiO₂/Si(001) interface studied with high-resolution rutherford backscattering spectroscopy/channeling. / Nakajima, Kaoru; Suzuki, Motofumi; Kimura, Kenji; Yamamoto, Masashi; Teramoto, Akinobu; Ohmi, Tadahiro; Hattori, Takeo.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 45, No. 4 A, 07.04.2006, p. 2467-2469.

Research output: Contribution to journal › Article › peer-review

Nakajima, K, Suzuki, M, Kimura, K, Yamamoto, M, Teramoto, A, Ohmi, T & Hattori, T 2006, 'Lattice distortion at SiO₂/Si(001) interface studied with high-resolution rutherford backscattering spectroscopy/channeling', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 45, no. 4 A, pp. 2467-2469. https://doi.org/10.1143/JJAP.45.2467

Nakajima, Kaoru ; Suzuki, Motofumi ; Kimura, Kenji ; Yamamoto, Masashi ; Teramoto, Akinobu ; Ohmi, Tadahiro ; Hattori, Takeo. / Lattice distortion at SiO₂/Si(001) interface studied with high-resolution rutherford backscattering spectroscopy/channeling. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2006 ; Vol. 45, No. 4 A. pp. 2467-2469.

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abstract = "The growth-temperature dependence of the transition structure at the SiO2/Si interface is studied by high-resolution Rutherford backscattering spectroscopy/channeling. A Si lattice distortion is found at the interface. Such distortion propagates more than 2 nm from the interface. It is shown that the SiO2/Si grown by wet oxidation at 1100°C has a smaller lattice distortion than that grown at 900°C. This can be explained in terms of the relaxation of the strained SiO2 network caused by the viscous flow of SiO2 at high temperatures.",

keywords = "Channeling, High-resolution RBS, Interface, Lattice distortion, SiO, Silicon",

author = "Kaoru Nakajima and Motofumi Suzuki and Kenji Kimura and Masashi Yamamoto and Akinobu Teramoto and Tadahiro Ohmi and Takeo Hattori",

note = "Funding Information: Acknowledgements This work was supported by JSPS KAKENHI Grant Numbers 15H05702, 26103002, and 26103004, the Collaborative Research Program of the Institute for Chemical Research, Kyoto University, and the R&D project for ICT Key Technology of MEXT from the Japan Society for the Promotion of Science (JSPS). This work was partly supported by The Cooperative Research Project Program of the Research Institute of Electrical Communication, Tohoku University. D.H.K. was supported as an Overseas Researcher under Postdoctoral Fellowship of JSPS (Grant Number P16314).",

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AU - Yamamoto, Masashi

AU - Teramoto, Akinobu

AU - Ohmi, Tadahiro

AU - Hattori, Takeo

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N2 - The growth-temperature dependence of the transition structure at the SiO2/Si interface is studied by high-resolution Rutherford backscattering spectroscopy/channeling. A Si lattice distortion is found at the interface. Such distortion propagates more than 2 nm from the interface. It is shown that the SiO2/Si grown by wet oxidation at 1100°C has a smaller lattice distortion than that grown at 900°C. This can be explained in terms of the relaxation of the strained SiO2 network caused by the viscous flow of SiO2 at high temperatures.

AB - The growth-temperature dependence of the transition structure at the SiO2/Si interface is studied by high-resolution Rutherford backscattering spectroscopy/channeling. A Si lattice distortion is found at the interface. Such distortion propagates more than 2 nm from the interface. It is shown that the SiO2/Si grown by wet oxidation at 1100°C has a smaller lattice distortion than that grown at 900°C. This can be explained in terms of the relaxation of the strained SiO2 network caused by the viscous flow of SiO2 at high temperatures.

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