Abstract
The growth-temperature dependence of the transition structure at the SiO2/Si interface is studied by high-resolution Rutherford backscattering spectroscopy/channeling. A Si lattice distortion is found at the interface. Such distortion propagates more than 2 nm from the interface. It is shown that the SiO2/Si grown by wet oxidation at 1100°C has a smaller lattice distortion than that grown at 900°C. This can be explained in terms of the relaxation of the strained SiO2 network caused by the viscous flow of SiO2 at high temperatures.
Original language | English |
---|---|
Pages (from-to) | 2467-2469 |
Number of pages | 3 |
Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
Volume | 45 |
Issue number | 4 A |
DOIs | |
Publication status | Published - 2006 Apr 7 |
Externally published | Yes |
Keywords
- Channeling
- High-resolution RBS
- Interface
- Lattice distortion
- SiO
- Silicon
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)