Latest power devices for photovoltaic inverters

T. Fujihira, A. Otsuki, Y. Takahashi, T. Ide, M. Kawano, N. Eguchi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

Excellent electrical properties of latest power devices for improving the efficiency of PV inverters are presented. Power modules using SiC-MOSFET and -SBD exhibit the possibility to realize PV inverters with peak efficiency beyond 99.0%. Silicon IGBT modules using RB-IGBT have enabled to mass-produce PV inverters with peak efficiency of 98.4%. Silicon SJ-MOSFET and discrete IGBT have enabled to improve the efficiency of small power PV inverters by 0.5 point.

Original languageEnglish
Title of host publicationProceedings - 2012 IEEE International Symposium on Industrial Electronics, ISIE 2012
Pages1791-1794
Number of pages4
DOIs
Publication statusPublished - 2012 Aug 15
Externally publishedYes
Event21st IEEE International Symposium on Industrial Electronics, ISIE 2012 - Hangzhou, China
Duration: 2012 May 282012 May 31

Publication series

NameIEEE International Symposium on Industrial Electronics

Other

Other21st IEEE International Symposium on Industrial Electronics, ISIE 2012
CountryChina
CityHangzhou
Period12/5/2812/5/31

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering

Fingerprint Dive into the research topics of 'Latest power devices for photovoltaic inverters'. Together they form a unique fingerprint.

Cite this