TY - JOUR
T1 - Latest developments of the spin-valve transistor
AU - Lodder, J. C.
AU - Monsma, D. J.
AU - Mollema, R.
AU - Shimatsu, T.
AU - Vlutters, R.
N1 - Copyright:
Copyright 2017 Elsevier B.V., All rights reserved.
PY - 1997
Y1 - 1997
N2 - A Co/Cu multilayer serves as a base region of an n-Si metal-base structure in spin-valve transistor (SVT). A 215% change in collector current is found in 40 kA/m at 77 K with typical characteristics of a spin-valve effect. The device is biased to inject hot electrons from one Si layer through the multilayer. The sputterbond technology and lithographic process are developed to reduce the dimensions of the device. The technology and the realization of an SVT also establish the feasibility of combining Si technology and spin electronics. The combination of nanomagnetism and nanoelectronics makes it possible to realize new devices and memory functions.
AB - A Co/Cu multilayer serves as a base region of an n-Si metal-base structure in spin-valve transistor (SVT). A 215% change in collector current is found in 40 kA/m at 77 K with typical characteristics of a spin-valve effect. The device is biased to inject hot electrons from one Si layer through the multilayer. The sputterbond technology and lithographic process are developed to reduce the dimensions of the device. The technology and the realization of an SVT also establish the feasibility of combining Si technology and spin electronics. The combination of nanomagnetism and nanoelectronics makes it possible to realize new devices and memory functions.
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U2 - 10.1016/S0304-8853(97)00594-5
DO - 10.1016/S0304-8853(97)00594-5
M3 - Article
AN - SCOPUS:0031268824
VL - 175
SP - 159
JO - Journal of Magnetism and Magnetic Materials
JF - Journal of Magnetism and Magnetic Materials
SN - 0304-8853
IS - 1-2
ER -