Latest developments of the spin-valve transistor

J. C. Lodder; D. J. Monsma; R. Mollema; T. Shimatsu; R. Vlutters

doi:10.1016/S0304-8853(97)00594-5

Latest developments of the spin-valve transistor

J. C. Lodder, D. J. Monsma, R. Mollema, T. Shimatsu, R. Vlutters

Research output: Contribution to journal › Article › peer-review

Abstract

A Co/Cu multilayer serves as a base region of an n-Si metal-base structure in spin-valve transistor (SVT). A 215% change in collector current is found in 40 kA/m at 77 K with typical characteristics of a spin-valve effect. The device is biased to inject hot electrons from one Si layer through the multilayer. The sputterbond technology and lithographic process are developed to reduce the dimensions of the device. The technology and the realization of an SVT also establish the feasibility of combining Si technology and spin electronics. The combination of nanomagnetism and nanoelectronics makes it possible to realize new devices and memory functions.

Original language	English
Pages (from-to)	159
Number of pages	1
Journal	Journal of Magnetism and Magnetic Materials
Volume	175
Issue number	1-2
DOIs	https://doi.org/10.1016/S0304-8853(97)00594-5
Publication status	Published - 1997
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1016/S0304-8853(97)00594-5

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abstract = "A Co/Cu multilayer serves as a base region of an n-Si metal-base structure in spin-valve transistor (SVT). A 215% change in collector current is found in 40 kA/m at 77 K with typical characteristics of a spin-valve effect. The device is biased to inject hot electrons from one Si layer through the multilayer. The sputterbond technology and lithographic process are developed to reduce the dimensions of the device. The technology and the realization of an SVT also establish the feasibility of combining Si technology and spin electronics. The combination of nanomagnetism and nanoelectronics makes it possible to realize new devices and memory functions.",

author = "Lodder, {J. C.} and Monsma, {D. J.} and R. Mollema and T. Shimatsu and R. Vlutters",

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AU - Lodder, J. C.

AU - Monsma, D. J.

AU - Mollema, R.

AU - Shimatsu, T.

AU - Vlutters, R.

PY - 1997

Y1 - 1997

N2 - A Co/Cu multilayer serves as a base region of an n-Si metal-base structure in spin-valve transistor (SVT). A 215% change in collector current is found in 40 kA/m at 77 K with typical characteristics of a spin-valve effect. The device is biased to inject hot electrons from one Si layer through the multilayer. The sputterbond technology and lithographic process are developed to reduce the dimensions of the device. The technology and the realization of an SVT also establish the feasibility of combining Si technology and spin electronics. The combination of nanomagnetism and nanoelectronics makes it possible to realize new devices and memory functions.

AB - A Co/Cu multilayer serves as a base region of an n-Si metal-base structure in spin-valve transistor (SVT). A 215% change in collector current is found in 40 kA/m at 77 K with typical characteristics of a spin-valve effect. The device is biased to inject hot electrons from one Si layer through the multilayer. The sputterbond technology and lithographic process are developed to reduce the dimensions of the device. The technology and the realization of an SVT also establish the feasibility of combining Si technology and spin electronics. The combination of nanomagnetism and nanoelectronics makes it possible to realize new devices and memory functions.

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Latest developments of the spin-valve transistor

Abstract

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