Latest developments of the spin-valve transistor

J. C. Lodder, D. J. Monsma, R. Mollema, T. Shimatsu, R. Vlutters

Research output: Contribution to journalArticlepeer-review

Abstract

A Co/Cu multilayer serves as a base region of an n-Si metal-base structure in spin-valve transistor (SVT). A 215% change in collector current is found in 40 kA/m at 77 K with typical characteristics of a spin-valve effect. The device is biased to inject hot electrons from one Si layer through the multilayer. The sputterbond technology and lithographic process are developed to reduce the dimensions of the device. The technology and the realization of an SVT also establish the feasibility of combining Si technology and spin electronics. The combination of nanomagnetism and nanoelectronics makes it possible to realize new devices and memory functions.

Original languageEnglish
Pages (from-to)159
Number of pages1
JournalJournal of Magnetism and Magnetic Materials
Volume175
Issue number1-2
DOIs
Publication statusPublished - 1997
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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