Laterally coupled triple self-assembled quantum dots

S. Amaha, T. Hatano, T. Kubo, S. Teraoka, A. Shibatomi, Y. Tokura, S. Tarucha

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We investigate the electronic properties of a sub-micron vertical resonant tunneling structure containing three self-assembled InAs quantum dots (SADs) surrounded by four gate electrodes. The stability diagram is obtained by measuring Coulomb oscillation peaks as a function of the four gate voltages, which are used to modulate the electro-chemical potential of each SAD differently. We assign the charge states in the diagram by identifying three sets of Coulomb oscillation lines. We observe specific anti-crossing behaviors for the two Coulomb oscillation lines in the different sets, reflecting parallel couplings between three SADs in the conduction channel.

Original languageEnglish
Title of host publicationProceedings of the 9th International Symposium on Foundations of Quantum Mechanics in the Light of New Technology, ISQM-Tokyo 2008
PublisherWorld Scientific Publishing Co. Pte Ltd
Pages194-197
Number of pages4
ISBN (Print)981428212X, 9789814282123
Publication statusPublished - 2009 Jan 1
Event9th International Symposium on Foundations of Quantum Mechanics in the Light of New Technology, ISQM-Tokyo 2008 - Hatoyama, Saitama, Japan
Duration: 2008 Aug 252008 Aug 28

Publication series

NameProceedings of the 9th International Symposium on Foundations of Quantum Mechanics in the Light of New Technology, ISQM-Tokyo 2008

Other

Other9th International Symposium on Foundations of Quantum Mechanics in the Light of New Technology, ISQM-Tokyo 2008
CountryJapan
CityHatoyama, Saitama
Period08/8/2508/8/28

Keywords

  • Quantum dots
  • Self-assembled quantum dots
  • Triple quantum dots

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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