Lateral transport properties of Nb-doped rutile- and anatase-TiO 2 films epitaxially grown on c-plane GaN

K. Hazu; T. Ohtomo; T. Nakayama; A. Tanaka; S. F. Chichibu

doi:10.1063/1.4746406

Lateral transport properties of Nb-doped rutile- and anatase-TiO ₂ films epitaxially grown on c-plane GaN

K. Hazu, T. Ohtomo, T. Nakayama, A. Tanaka, S. F. Chichibu

Division of Measurements

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Valence-band offsets for Nb-doped (100) rutile (R-TiO ₂) epilayer on (0001) GaN and (001) anatase (A-TiO ₂) epilayer mixed with R-TiO ₂ on (0001) GaN were determined using x-ray photoelectron spectroscopy to be 0.2 eV and 0.6 eV, respectively. Accordingly, they form type-I and type-II heterojunctions, respectively. The electron mobility as high as 260 cm ² V ^-1s ^-1 was measured for the A (+R)-TiO ₂: Nb epilayer on undoped GaN, which is quantitatively explained in terms of electron accumulation at the interfacial region of GaN. The intrinsic mobility of approximately 30 cm ² V ^-1s ^-1 at 300 K was obtained for the A (+R)-TiO ₂: Nb epilayer grown on a p-type GaN.

Original language	English
Article number	072107
Journal	Applied Physics Letters
Volume	101
Issue number	7
DOIs	https://doi.org/10.1063/1.4746406
Publication status	Published - 2012 Aug 13

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.4746406

Cite this

@article{b15a94e31f694a36a471f09f0f32ebb4,

title = "Lateral transport properties of Nb-doped rutile- and anatase-TiO 2 films epitaxially grown on c-plane GaN",

abstract = "Valence-band offsets for Nb-doped (100) rutile (R-TiO 2) epilayer on (0001) GaN and (001) anatase (A-TiO 2) epilayer mixed with R-TiO 2 on (0001) GaN were determined using x-ray photoelectron spectroscopy to be 0.2 eV and 0.6 eV, respectively. Accordingly, they form type-I and type-II heterojunctions, respectively. The electron mobility as high as 260 cm 2 V -1s -1 was measured for the A (+R)-TiO 2: Nb epilayer on undoped GaN, which is quantitatively explained in terms of electron accumulation at the interfacial region of GaN. The intrinsic mobility of approximately 30 cm 2 V -1s -1 at 300 K was obtained for the A (+R)-TiO 2: Nb epilayer grown on a p-type GaN.",

author = "K. Hazu and T. Ohtomo and T. Nakayama and A. Tanaka and Chichibu, {S. F.}",

note = "Funding Information: The authors would like to thank Sanyu Electron Co., Ltd. for the support of HWPS equipment. This work was supported in part by the Management Expenses Grants for National Universities Corporations from the Ministry of Education, Culture, Sports, Science and Technology of Japan (MEXT).",

year = "2012",

month = aug,

day = "13",

doi = "10.1063/1.4746406",

language = "English",

volume = "101",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "7",

}

TY - JOUR

T1 - Lateral transport properties of Nb-doped rutile- and anatase-TiO 2 films epitaxially grown on c-plane GaN

AU - Hazu, K.

AU - Ohtomo, T.

AU - Nakayama, T.

AU - Tanaka, A.

AU - Chichibu, S. F.

N1 - Funding Information: The authors would like to thank Sanyu Electron Co., Ltd. for the support of HWPS equipment. This work was supported in part by the Management Expenses Grants for National Universities Corporations from the Ministry of Education, Culture, Sports, Science and Technology of Japan (MEXT).

PY - 2012/8/13

Y1 - 2012/8/13

N2 - Valence-band offsets for Nb-doped (100) rutile (R-TiO 2) epilayer on (0001) GaN and (001) anatase (A-TiO 2) epilayer mixed with R-TiO 2 on (0001) GaN were determined using x-ray photoelectron spectroscopy to be 0.2 eV and 0.6 eV, respectively. Accordingly, they form type-I and type-II heterojunctions, respectively. The electron mobility as high as 260 cm 2 V -1s -1 was measured for the A (+R)-TiO 2: Nb epilayer on undoped GaN, which is quantitatively explained in terms of electron accumulation at the interfacial region of GaN. The intrinsic mobility of approximately 30 cm 2 V -1s -1 at 300 K was obtained for the A (+R)-TiO 2: Nb epilayer grown on a p-type GaN.

AB - Valence-band offsets for Nb-doped (100) rutile (R-TiO 2) epilayer on (0001) GaN and (001) anatase (A-TiO 2) epilayer mixed with R-TiO 2 on (0001) GaN were determined using x-ray photoelectron spectroscopy to be 0.2 eV and 0.6 eV, respectively. Accordingly, they form type-I and type-II heterojunctions, respectively. The electron mobility as high as 260 cm 2 V -1s -1 was measured for the A (+R)-TiO 2: Nb epilayer on undoped GaN, which is quantitatively explained in terms of electron accumulation at the interfacial region of GaN. The intrinsic mobility of approximately 30 cm 2 V -1s -1 at 300 K was obtained for the A (+R)-TiO 2: Nb epilayer grown on a p-type GaN.

UR - http://www.scopus.com/inward/record.url?scp=84865433642&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84865433642&partnerID=8YFLogxK

U2 - 10.1063/1.4746406

DO - 10.1063/1.4746406

M3 - Article

AN - SCOPUS:84865433642

VL - 101

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 7

M1 - 072107

ER -

Lateral transport properties of Nb-doped rutile- and anatase-TiO ₂ films epitaxially grown on c-plane GaN

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this