Lateral transport properties of Nb-doped rutile- and anatase-TiO 2 films epitaxially grown on c-plane GaN

K. Hazu; T. Ohtomo; T. Nakayama; A. Tanaka; S. F. Chichibu

doi:10.1063/1.4746406

Lateral transport properties of Nb-doped rutile- and anatase-TiO ₂ films epitaxially grown on c-plane GaN

K. Hazu, T. Ohtomo, T. Nakayama, A. Tanaka, S. F. Chichibu

Division of Measurements

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Valence-band offsets for Nb-doped (100) rutile (R-TiO ₂) epilayer on (0001) GaN and (001) anatase (A-TiO ₂) epilayer mixed with R-TiO ₂ on (0001) GaN were determined using x-ray photoelectron spectroscopy to be 0.2 eV and 0.6 eV, respectively. Accordingly, they form type-I and type-II heterojunctions, respectively. The electron mobility as high as 260 cm ² V ^-1s ^-1 was measured for the A (+R)-TiO ₂: Nb epilayer on undoped GaN, which is quantitatively explained in terms of electron accumulation at the interfacial region of GaN. The intrinsic mobility of approximately 30 cm ² V ^-1s ^-1 at 300 K was obtained for the A (+R)-TiO ₂: Nb epilayer grown on a p-type GaN.

Original language	English
Article number	072107
Journal	Applied Physics Letters
Volume	101
Issue number	7
DOIs	https://doi.org/10.1063/1.4746406
Publication status	Published - 2012 Aug 13

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{b15a94e31f694a36a471f09f0f32ebb4,

title = "Lateral transport properties of Nb-doped rutile- and anatase-TiO 2 films epitaxially grown on c-plane GaN",

abstract = "Valence-band offsets for Nb-doped (100) rutile (R-TiO 2) epilayer on (0001) GaN and (001) anatase (A-TiO 2) epilayer mixed with R-TiO 2 on (0001) GaN were determined using x-ray photoelectron spectroscopy to be 0.2 eV and 0.6 eV, respectively. Accordingly, they form type-I and type-II heterojunctions, respectively. The electron mobility as high as 260 cm 2 V -1s -1 was measured for the A (+R)-TiO 2: Nb epilayer on undoped GaN, which is quantitatively explained in terms of electron accumulation at the interfacial region of GaN. The intrinsic mobility of approximately 30 cm 2 V -1s -1 at 300 K was obtained for the A (+R)-TiO 2: Nb epilayer grown on a p-type GaN.",

author = "K. Hazu and T. Ohtomo and T. Nakayama and A. Tanaka and Chichibu, {S. F.}",

year = "2012",

month = aug,

day = "13",

doi = "10.1063/1.4746406",

language = "English",

volume = "101",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "7",

}

TY - JOUR

T1 - Lateral transport properties of Nb-doped rutile- and anatase-TiO 2 films epitaxially grown on c-plane GaN

AU - Hazu, K.

AU - Ohtomo, T.

AU - Nakayama, T.

AU - Tanaka, A.

AU - Chichibu, S. F.

PY - 2012/8/13

Y1 - 2012/8/13

N2 - Valence-band offsets for Nb-doped (100) rutile (R-TiO 2) epilayer on (0001) GaN and (001) anatase (A-TiO 2) epilayer mixed with R-TiO 2 on (0001) GaN were determined using x-ray photoelectron spectroscopy to be 0.2 eV and 0.6 eV, respectively. Accordingly, they form type-I and type-II heterojunctions, respectively. The electron mobility as high as 260 cm 2 V -1s -1 was measured for the A (+R)-TiO 2: Nb epilayer on undoped GaN, which is quantitatively explained in terms of electron accumulation at the interfacial region of GaN. The intrinsic mobility of approximately 30 cm 2 V -1s -1 at 300 K was obtained for the A (+R)-TiO 2: Nb epilayer grown on a p-type GaN.

AB - Valence-band offsets for Nb-doped (100) rutile (R-TiO 2) epilayer on (0001) GaN and (001) anatase (A-TiO 2) epilayer mixed with R-TiO 2 on (0001) GaN were determined using x-ray photoelectron spectroscopy to be 0.2 eV and 0.6 eV, respectively. Accordingly, they form type-I and type-II heterojunctions, respectively. The electron mobility as high as 260 cm 2 V -1s -1 was measured for the A (+R)-TiO 2: Nb epilayer on undoped GaN, which is quantitatively explained in terms of electron accumulation at the interfacial region of GaN. The intrinsic mobility of approximately 30 cm 2 V -1s -1 at 300 K was obtained for the A (+R)-TiO 2: Nb epilayer grown on a p-type GaN.

UR - http://www.scopus.com/inward/record.url?scp=84865433642&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84865433642&partnerID=8YFLogxK

U2 - 10.1063/1.4746406

DO - 10.1063/1.4746406

M3 - Article

AN - SCOPUS:84865433642

VL - 101

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 7

M1 - 072107

ER -