Lateral size of atomically flat oxidized region on Si(111) surface

Akio Omura, Hiroaki Sekikawa, Takeo Hattori

    Research output: Contribution to journalArticle

    15 Citations (Scopus)

    Abstract

    A lateral size of an atomically flat oxidized region on a Si(111) surface was found to be in the rage from 3 to 6 nm at an average oxide film thickness of 0.7 nm, which corresponds to two molecular layers of silicon dioxide, from the measurement of effect of terrace width on the layer-by-layer oxidation.

    Original languageEnglish
    Pages (from-to)127-130
    Number of pages4
    JournalApplied Surface Science
    Volume117-118
    DOIs
    Publication statusPublished - 1997 Jun 2

    Keywords

    • Interface structure
    • Layer-by-layer oxidation
    • Oxidation reaction
    • SiO /Si
    • Terrace width

    ASJC Scopus subject areas

    • Chemistry(all)
    • Condensed Matter Physics
    • Physics and Astronomy(all)
    • Surfaces and Interfaces
    • Surfaces, Coatings and Films

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