A photodetector with lateral GaAs n+-π-n+ structure is studied. This structure is fabricated by Ga ion implantation into n+-GaAs epilayer on a semi-insulating GaAs substrate using focused-ion-beam (FIB) technology. This photodetector behaves as a phototransistor in low-bias region and avalanche multiplication appears beyond a breakdown voltage. Multiplication gain of more than 50 and impulse response of less than 200 ps were obtained. These characteristics make this device suitable for application in monolithic optoelectronic circuits.
ASJC Scopus subject areas
- Physics and Astronomy(all)