Lateral epitaxial growth of sputtered Al(110) over SiO2 and its electromigration characteristics

S. Yokoyama, H. Ichikawa, S. Shingubara, M. Koyanagi

Research output: Contribution to conferencePaper

2 Citations (Scopus)

Abstract

Solid phase lateral epitaxy of Al(110) over SiO2 was succeeded by the annealing of sputtered A1 on misoriented Si(100) (4° off toward [011] direction) covered with patterned SiO2. The orientation dependence of the lateral solid phase epitaxy was examined and its isotropic nature was revealed. Electromigration resistance of Al(110) single crystal was first reported. The EM life time of single crystal Al(110) is more than 100 times longer than the conventional polycrystal Al, however it strongly depends on the current direction.

Original languageEnglish
Pages176-178
Number of pages3
DOIs
Publication statusPublished - 1992 Jan 1
EventExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn
Duration: 1992 Aug 261992 Aug 28

Other

OtherExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92
CityTsukuba, Jpn
Period92/8/2692/8/28

ASJC Scopus subject areas

  • Engineering(all)

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    Yokoyama, S., Ichikawa, H., Shingubara, S., & Koyanagi, M. (1992). Lateral epitaxial growth of sputtered Al(110) over SiO2 and its electromigration characteristics. 176-178. Paper presented at Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92, Tsukuba, Jpn, . https://doi.org/10.7567/ssdm.1992.pa4-1