Solid phase lateral epitaxy of Al(110) over SiO2 was succeeded by the annealing of sputtered A1 on misoriented Si(100) (4° off toward  direction) covered with patterned SiO2. The orientation dependence of the lateral solid phase epitaxy was examined and its isotropic nature was revealed. Electromigration resistance of Al(110) single crystal was first reported. The EM life time of single crystal Al(110) is more than 100 times longer than the conventional polycrystal Al, however it strongly depends on the current direction.
|Number of pages||3|
|Publication status||Published - 1992 Jan 1|
|Event||Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn|
Duration: 1992 Aug 26 → 1992 Aug 28
|Other||Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92|
|Period||92/8/26 → 92/8/28|
ASJC Scopus subject areas