Abstract
The static and transient latchup performance of conventional and retrograde n-well CMOS technologies is compared. The retrograde n-well structures are shown to have superior latchup immunity, due primarily to the reduced n-well sheet resistance and the greater tolerance to thin p on p+ epitaxial material.
Original language | English |
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Pages (from-to) | 2156-2164 |
Number of pages | 9 |
Journal | IEEE Transactions on Electron Devices |
Volume | 34 |
Issue number | 10 |
DOIs | |
Publication status | Published - 1987 Oct |
Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering