Latchup Performance of Retrograde and Conventional n-Well CMOS Technologies

Alan G. Lewis, Russel A. Martin, Tiao Yuan Huang, John Y. Chen, Mitsumasa Koyanagi

Research output: Contribution to journalArticlepeer-review

40 Citations (Scopus)

Abstract

The static and transient latchup performance of conventional and retrograde n-well CMOS technologies is compared. The retrograde n-well structures are shown to have superior latchup immunity, due primarily to the reduced n-well sheet resistance and the greater tolerance to thin p on p+ epitaxial material.

Original languageEnglish
Pages (from-to)2156-2164
Number of pages9
JournalIEEE Transactions on Electron Devices
Volume34
Issue number10
DOIs
Publication statusPublished - 1987 Oct

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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