@inproceedings{c546accea1624f5a98682dcd6bb2efdb,
title = "La2O3 gate dielectric thin film with Sc 2O3 buffer layer for high temperature annealing",
abstract = "Leakage current characteristics of high temperature annealed La 2O3 film with Sc2O3 buffer layer was reported. Large amount of leakage current suppression was obtained by inserting Sc2O3 when annealed at high temperature, without degrading the Equivalent Oxide Thickness (EOT). La2O 3/Sc2O3 gate stack would be one of the solution for La2O3-based gate insulator for high temperature annealing. copyright The Electrochemical Society.",
author = "Yasuhiro Shiino and Kuniyuki Kakushima and Parhat Ahmet and Kazuo Tsutsui and Nobuyuki Sugii and Takeo Hattori and Hiroshi Iwai",
year = "2006",
doi = "10.1149/1.2355738",
language = "English",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "3",
pages = "511--519",
booktitle = "Physics and Technology of High-k Gate Dielectrics 4",
edition = "3",
note = "Physics and Technology of High-k Gate Dielectrics 4 - 210th Electrochemical Society Meeting ; Conference date: 29-10-2006 Through 03-11-2006",
}