Abstract
Leakage current characteristics of high temperature annealed La 2O3 film with Sc2O3 buffer layer was reported. Large amount of leakage current suppression was obtained by inserting Sc2O3 when annealed at high temperature, without degrading the Equivalent Oxide Thickness (EOT). La2O 3/Sc2O3 gate stack would be one of the solution for La2O3-based gate insulator for high temperature annealing. copyright The Electrochemical Society.
| Original language | English |
|---|---|
| Pages (from-to) | 511-519 |
| Number of pages | 9 |
| Journal | ECS Transactions |
| Volume | 3 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2006 |
| Externally published | Yes |
| Event | Physics and Technology of High-k Gate Dielectrics 4 - 210th Electrochemical Society Meeting - Cancun, Mexico Duration: 2006 Oct 29 → 2006 Nov 3 |
ASJC Scopus subject areas
- Engineering(all)
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Shiino, Y., Kakushima, K., Ahmet, P., Tsutsui, K., Sugii, N., Hattori, T., & Iwai, H. (2006). La2O3 gate dielectric thin film with Sc 2O3 buffer layer for high temperature annealing. ECS Transactions, 3(3), 511-519. https://doi.org/10.1149/1.2355738