La2O3 gate dielectric thin film with Sc 2O3 buffer layer for high temperature annealing

Yasuhiro Shiino; Kuniyuki Kakushima; Parhat Ahmet; Kazuo Tsutsui; Nobuyuki Sugii; Takeo Hattori; Hiroshi Iwai

doi:10.1149/1.2355738

La₂O₃ gate dielectric thin film with Sc ₂O₃ buffer layer for high temperature annealing

Yasuhiro Shiino, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Leakage current characteristics of high temperature annealed La ₂O₃ film with Sc₂O₃ buffer layer was reported. Large amount of leakage current suppression was obtained by inserting Sc₂O₃ when annealed at high temperature, without degrading the Equivalent Oxide Thickness (EOT). La₂O ₃/Sc₂O₃ gate stack would be one of the solution for La₂O₃-based gate insulator for high temperature annealing. copyright The Electrochemical Society.

Original language	English
Title of host publication	Physics and Technology of High-k Gate Dielectrics 4
Publisher	Electrochemical Society Inc.
Pages	511-519
Number of pages	9
Edition	3
ISBN (Electronic)	1566775035
DOIs	https://doi.org/10.1149/1.2355738
Publication status	Published - 2006
Externally published	Yes
Event	Physics and Technology of High-k Gate Dielectrics 4 - 210th Electrochemical Society Meeting - Cancun, Mexico Duration: 2006 Oct 29 → 2006 Nov 3

Publication series

Name	ECS Transactions
Number	3
Volume	3
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	Physics and Technology of High-k Gate Dielectrics 4 - 210th Electrochemical Society Meeting
Country/Territory	Mexico
City	Cancun
Period	06/10/29 → 06/11/3

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1149/1.2355738

Cite this

La₂O₃ gate dielectric thin film with Sc ₂O₃ buffer layer for high temperature annealing. / Shiino, Yasuhiro; Kakushima, Kuniyuki; Ahmet, Parhat; Tsutsui, Kazuo; Sugii, Nobuyuki; Hattori, Takeo; Iwai, Hiroshi.

Physics and Technology of High-k Gate Dielectrics 4. 3. ed. Electrochemical Society Inc., 2006. p. 511-519 (ECS Transactions; Vol. 3, No. 3).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Shiino, Y, Kakushima, K, Ahmet, P, Tsutsui, K, Sugii, N, Hattori, T & Iwai, H 2006, La₂O₃ gate dielectric thin film with Sc ₂O₃ buffer layer for high temperature annealing. in Physics and Technology of High-k Gate Dielectrics 4. 3 edn, ECS Transactions, no. 3, vol. 3, Electrochemical Society Inc., pp. 511-519, Physics and Technology of High-k Gate Dielectrics 4 - 210th Electrochemical Society Meeting, Cancun, Mexico, 06/10/29. https://doi.org/10.1149/1.2355738

@inproceedings{c546accea1624f5a98682dcd6bb2efdb,

title = "La2O3 gate dielectric thin film with Sc 2O3 buffer layer for high temperature annealing",

abstract = "Leakage current characteristics of high temperature annealed La 2O3 film with Sc2O3 buffer layer was reported. Large amount of leakage current suppression was obtained by inserting Sc2O3 when annealed at high temperature, without degrading the Equivalent Oxide Thickness (EOT). La2O 3/Sc2O3 gate stack would be one of the solution for La2O3-based gate insulator for high temperature annealing. copyright The Electrochemical Society.",

author = "Yasuhiro Shiino and Kuniyuki Kakushima and Parhat Ahmet and Kazuo Tsutsui and Nobuyuki Sugii and Takeo Hattori and Hiroshi Iwai",

year = "2006",

doi = "10.1149/1.2355738",

language = "English",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "3",

pages = "511--519",

booktitle = "Physics and Technology of High-k Gate Dielectrics 4",

edition = "3",

note = "Physics and Technology of High-k Gate Dielectrics 4 - 210th Electrochemical Society Meeting ; Conference date: 29-10-2006 Through 03-11-2006",

}

TY - GEN

T1 - La2O3 gate dielectric thin film with Sc 2O3 buffer layer for high temperature annealing

AU - Shiino, Yasuhiro

AU - Kakushima, Kuniyuki

AU - Ahmet, Parhat

AU - Tsutsui, Kazuo

AU - Sugii, Nobuyuki

AU - Hattori, Takeo

AU - Iwai, Hiroshi

PY - 2006

Y1 - 2006

N2 - Leakage current characteristics of high temperature annealed La 2O3 film with Sc2O3 buffer layer was reported. Large amount of leakage current suppression was obtained by inserting Sc2O3 when annealed at high temperature, without degrading the Equivalent Oxide Thickness (EOT). La2O 3/Sc2O3 gate stack would be one of the solution for La2O3-based gate insulator for high temperature annealing. copyright The Electrochemical Society.

AB - Leakage current characteristics of high temperature annealed La 2O3 film with Sc2O3 buffer layer was reported. Large amount of leakage current suppression was obtained by inserting Sc2O3 when annealed at high temperature, without degrading the Equivalent Oxide Thickness (EOT). La2O 3/Sc2O3 gate stack would be one of the solution for La2O3-based gate insulator for high temperature annealing. copyright The Electrochemical Society.

UR - http://www.scopus.com/inward/record.url?scp=33846999035&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33846999035&partnerID=8YFLogxK

U2 - 10.1149/1.2355738

DO - 10.1149/1.2355738

M3 - Conference contribution

AN - SCOPUS:33846999035

T3 - ECS Transactions

SP - 511

EP - 519

BT - Physics and Technology of High-k Gate Dielectrics 4

PB - Electrochemical Society Inc.

T2 - Physics and Technology of High-k Gate Dielectrics 4 - 210th Electrochemical Society Meeting

Y2 - 29 October 2006 through 3 November 2006

ER -