Laser-induced long-lifetime electron tunnelling in biased asymmetric double quantum well

Y. Ohtsuki; Mark I. Stockman; Lakshmi N. Pandey; Thomas F. George

Laser-induced long-lifetime electron tunnelling in biased asymmetric double quantum well

Y. Ohtsuki, Mark I. Stockman, Lakshmi N. Pandey, Thomas F. George

SCI - Chemistry

Research output: Contribution to journal › Article › peer-review

Abstract

Laser (cw)-induced tunnelling dynamics of an electronic wavepacket in a biased asymmetric double quantum well (DWQ) structure is studied numerically, varying the quantum level alignment in the DQW. The Markoff master equati on is used to determine the time evolution of the wavepacket that is initially created by a pump pulse. Laser-induced long-lifetime (practically equal to the population relaxation time) electron tunnelling is observed when the Rabi frequency is smaller in magnitude than the dephasing rate. It is shown that this laser-induced effect can be eradicated by adjusting the bias voltage to align the upper two electronic states in the narrow and wide wells.

Original language	English
Pages (from-to)	273-282
Number of pages	10
Journal	Superlattices and Microstructures
Volume	23
Issue number	2
Publication status	Published - 1998 Jan 1

Keywords

Electron tunnelling
Laser control
Quantum well

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Electrical and Electronic Engineering

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@article{19f7491c07564e5bbdeb7d6bb5f49125,

title = "Laser-induced long-lifetime electron tunnelling in biased asymmetric double quantum well",

abstract = "Laser (cw)-induced tunnelling dynamics of an electronic wavepacket in a biased asymmetric double quantum well (DWQ) structure is studied numerically, varying the quantum level alignment in the DQW. The Markoff master equati on is used to determine the time evolution of the wavepacket that is initially created by a pump pulse. Laser-induced long-lifetime (practically equal to the population relaxation time) electron tunnelling is observed when the Rabi frequency is smaller in magnitude than the dephasing rate. It is shown that this laser-induced effect can be eradicated by adjusting the bias voltage to align the upper two electronic states in the narrow and wide wells.",

keywords = "Electron tunnelling, Laser control, Quantum well",

author = "Y. Ohtsuki and Stockman, {Mark I.} and Pandey, {Lakshmi N.} and George, {Thomas F.}",

year = "1998",

month = jan,

day = "1",

language = "English",

volume = "23",

pages = "273--282",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

publisher = "Academic Press Inc.",

number = "2",

}

TY - JOUR

T1 - Laser-induced long-lifetime electron tunnelling in biased asymmetric double quantum well

AU - Ohtsuki, Y.

AU - Stockman, Mark I.

AU - Pandey, Lakshmi N.

AU - George, Thomas F.

PY - 1998/1/1

Y1 - 1998/1/1

N2 - Laser (cw)-induced tunnelling dynamics of an electronic wavepacket in a biased asymmetric double quantum well (DWQ) structure is studied numerically, varying the quantum level alignment in the DQW. The Markoff master equati on is used to determine the time evolution of the wavepacket that is initially created by a pump pulse. Laser-induced long-lifetime (practically equal to the population relaxation time) electron tunnelling is observed when the Rabi frequency is smaller in magnitude than the dephasing rate. It is shown that this laser-induced effect can be eradicated by adjusting the bias voltage to align the upper two electronic states in the narrow and wide wells.

AB - Laser (cw)-induced tunnelling dynamics of an electronic wavepacket in a biased asymmetric double quantum well (DWQ) structure is studied numerically, varying the quantum level alignment in the DQW. The Markoff master equati on is used to determine the time evolution of the wavepacket that is initially created by a pump pulse. Laser-induced long-lifetime (practically equal to the population relaxation time) electron tunnelling is observed when the Rabi frequency is smaller in magnitude than the dephasing rate. It is shown that this laser-induced effect can be eradicated by adjusting the bias voltage to align the upper two electronic states in the narrow and wide wells.

KW - Electron tunnelling

KW - Laser control

KW - Quantum well

UR - http://www.scopus.com/inward/record.url?scp=11544343671&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=11544343671&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:11544343671

VL - 23

SP - 273

EP - 282

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

SN - 0749-6036

IS - 2

ER -