Laser-induced long-lifetime electron tunnelling in biased asymmetric double quantum well

Y. Ohtsuki, Mark I. Stockman, Lakshmi N. Pandey, Thomas F. George

Research output: Contribution to journalArticlepeer-review


Laser (cw)-induced tunnelling dynamics of an electronic wavepacket in a biased asymmetric double quantum well (DWQ) structure is studied numerically, varying the quantum level alignment in the DQW. The Markoff master equati on is used to determine the time evolution of the wavepacket that is initially created by a pump pulse. Laser-induced long-lifetime (practically equal to the population relaxation time) electron tunnelling is observed when the Rabi frequency is smaller in magnitude than the dephasing rate. It is shown that this laser-induced effect can be eradicated by adjusting the bias voltage to align the upper two electronic states in the narrow and wide wells.

Original languageEnglish
Pages (from-to)273-282
Number of pages10
JournalSuperlattices and Microstructures
Issue number2
Publication statusPublished - 1998


  • Electron tunnelling
  • Laser control
  • Quantum well

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


Dive into the research topics of 'Laser-induced long-lifetime electron tunnelling in biased asymmetric double quantum well'. Together they form a unique fingerprint.

Cite this