Laser etching on the Cl-saturated Si(111)7*7 surface at 266 nm studied by scanning tunnelling microscopy

M. Suguri, T. Hashizume, Y. Hasegawa, T. Sakurai, Y. Murata

    Research output: Contribution to journalArticle

    17 Citations (Scopus)

    Abstract

    Using scanning tunnelling microscopy, the authors have observed structural modifications of the chlorinated Si(111)7*7 surface induced by 266 nm laser irradiation. At a very low laser fluence of 0.7 mJ cm-2, at which thermal desorption can be ignored, a periodic striped pattern along the (110) direction of the Si(111) surface is imaged. This pattern consists of flat terraces and narrow grooves of approximately 60 and approximately 10 AA in width, respectively.

    Original languageEnglish
    Article number005
    Pages (from-to)8435-8440
    Number of pages6
    JournalJournal of Physics: Condensed Matter
    Volume4
    Issue number44
    DOIs
    Publication statusPublished - 1992 Dec 1

    ASJC Scopus subject areas

    • Materials Science(all)
    • Condensed Matter Physics

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