Laser chemical vapor deposition of titanium nitride films with tetrakis (diethylamido) titanium and ammonia system

Yansheng Gong, Rong Tu, Takashi Goto

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Wide-area and thick titanium nitride (TiNx) films were prepared on Al2O3 substrate by laser chemical vapor deposition (LCVD) using tetrakis (diethylamido) titanium (TDEAT) and ammonia (NH3) as source materials. Effects of laser power (PL) and pre-heating temperature (Tpre) on the composition, microstructure and deposition rate of TiNx films were investigated. (111) and (200) oriented TiNx films in a single phase were obtained. The lattice parameter and N to Ti ratio of the TiNx films slightly increased with increasing PL and was close to stoichiometric at PL > 150 W. TiNx films had a cauliflower-like surface and columnar cross section. The deposition rate of TiNx films increased from 42 to 90 μm/h at a depositing area of 10 mm by 10 mm substrate, decreasing with increasing PL and Tpre. The highest volume deposition rate of TiNx films was about 102 to 105 times greater than those of previous LCVD using Nd:YAG laser, argon ion laser and excimer laser.

Original languageEnglish
Pages (from-to)2111-2117
Number of pages7
JournalSurface and Coatings Technology
Volume204
Issue number14
DOIs
Publication statusPublished - 2010 Apr 15

Keywords

  • High speed deposition
  • LCVD
  • Microstructure
  • TDEAT
  • TiN films

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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