Laser chemical vapor deposition of SiC films with CO2 laser

Kengo Fujie, Akihiko Ito, Rong Tu, Takashi Goto

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24 Citations (Scopus)


SiC films were prepared by laser chemical vapor deposition using a CO 2 laser (maximum laser power: 245W) with HMDS (hexamethyldisilane) precursor and the effects of deposition conditions on the phase, microstructure and deposition rate were investigated. At pre-heating temperature of 323K and laser power (PL) above 119W (deposition temperature (Tdep) above 1410 K), (1 1 1)-oriented 3C SiC (β-SiC) films were obtained. With increasing Tdep, the microstructure of these SiC films changed from glass-like (Tdep < 1460 K) to cauliflower-like (Tdep = 1460-1560 K) to granular (Tdep > 1560 K). Conical facets formed on the surface of granular SiC films at around Tdep = 1650 K. The deposition rate (Rdep) of SiC films showed a maximum at Tpre = 473K and PL = 119W(Tdep = 1490 K) and reached 2200 μmh -1.

Original languageEnglish
Pages (from-to)238-242
Number of pages5
JournalJournal of Alloys and Compounds
Issue number1
Publication statusPublished - 2010 Jul 16


  • Coating
  • Laser CVD
  • Microstructure
  • Silicon carbide

ASJC Scopus subject areas

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry


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