Abstract
A Co2Cr0.6Fe0.4Al Heusler alloy film exhibited a B2 structure, which was deposited using a magnetron sputtering system on a thermally oxidized Si substrate at room temperature without any buffer layers. The film exhibited the magnetic moment of 2.04μB per formula unit, nearly the integer number of Bohr magnetons, suggesting a localized nature of ferromagnetism similar to that of many Heusler compounds, which is a necessary condition for half metallicity. A spin- valve-type tunneling junction with a Co2(Cr, Fe)Al Heusler alloy film was fabricated using metal masks, which consists of Co2Cr0.6Fe0.4Al(10 nm)/AlOx (1.8 nm)/CoFe (3 nm)/NiFe (5 nm)/IrMn (15 nm)/Ta (5nm), deposited on a thermally oxidized Si substrate without a buffer layer. The junction demonstrated large tunneling magnetoresistance of 16% at room temperature and 26.5% at 5 K.
Original language | English |
---|---|
Pages (from-to) | L419-L422 |
Journal | Japanese Journal of Applied Physics, Part 2: Letters |
Volume | 42 |
Issue number | 4 B |
DOIs | |
Publication status | Published - 2003 Apr 15 |
Keywords
- Heusler alloy
- Magnetic moment
- Magnetoresistance
- Structure
- Temperature dependence
- Tunnel
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)