Large tunneling magnetoresistance at room temperature using a Heusler alloy with the B2 structure

Koichiro Inomata, Susumu Okamura, Ryota Goto, Nobuki Tezuka

Research output: Contribution to journalLetterpeer-review

225 Citations (Scopus)

Abstract

A Co2Cr0.6Fe0.4Al Heusler alloy film exhibited a B2 structure, which was deposited using a magnetron sputtering system on a thermally oxidized Si substrate at room temperature without any buffer layers. The film exhibited the magnetic moment of 2.04μB per formula unit, nearly the integer number of Bohr magnetons, suggesting a localized nature of ferromagnetism similar to that of many Heusler compounds, which is a necessary condition for half metallicity. A spin- valve-type tunneling junction with a Co2(Cr, Fe)Al Heusler alloy film was fabricated using metal masks, which consists of Co2Cr0.6Fe0.4Al(10 nm)/AlOx (1.8 nm)/CoFe (3 nm)/NiFe (5 nm)/IrMn (15 nm)/Ta (5nm), deposited on a thermally oxidized Si substrate without a buffer layer. The junction demonstrated large tunneling magnetoresistance of 16% at room temperature and 26.5% at 5 K.

Original languageEnglish
Pages (from-to)L419-L422
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume42
Issue number4 B
DOIs
Publication statusPublished - 2003 Apr 15

Keywords

  • Heusler alloy
  • Magnetic moment
  • Magnetoresistance
  • Structure
  • Temperature dependence
  • Tunnel

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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