Large tunnel magnetoresistance of 1056% at room temperature in mgo based double barrier magnetic tunnel junction

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Abstract

CoFeB/MgO/CoFeB/MgO/CoFeB double barrier magnetic tunnel junctions (DBMTJs) with thin middle layers were fabricated on SiO2/ Si(001) substrates by r.f. magnetron sputtering. We successfully obtained a large tunnel magnetoresistance of 1056% at room temperature in a DBMTJ with a middle CoFeB layer thickness of 1.2 nm that was fabricated at a relatively low post-deposition annealing temperature of 350 °C. This DBMTJ also realized sharp magnetization switching in the free middle CoFeB layer, which is attributed to strong antiferromagnetic coupling between the exterior CoFeB and PtMn layers. These favorable magnetoresistive properties offer interesting possibilities for developing practical spintronics applications and noble magnetotransport physics.

Original languageEnglish
Article number083002
JournalApplied Physics Express
Volume2
Issue number8
DOIs
Publication statusPublished - 2009 Aug 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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