Large tunnel magnetoresistance in magnetic tunnel junctions using a Co 2MnSi Heusler alloy electrode and a MgO barrier

Sumito Tsunegi, Yuya Sakuraba, Mikihiko Oogane, Koki Takanashi, Yasuo Ando

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204 Citations (Scopus)

Abstract

A large tunnel magnetoresistance (TMR) ratio of 753% has been observed at 2 K in a magnetic tunnel junction (MTJ) using a Co2MnSi Heusler alloy electrode and a crystalline MgO tunnel barrier. This TMR ratio is the largest reported to date in MTJs using a Heusler alloy electrode. Moreover, we have observed a large TMR ratio of 217% at room temperature (RT). This TMR at RT is much larger than that of MTJs using an amorphous Al-oxide tunnel barrier. However, the temperature dependence of the TMR ratio is still large because of inelastic tunneling in the antiparallel magnetic configuration.

Original languageEnglish
Article number112506
JournalApplied Physics Letters
Volume93
Issue number11
DOIs
Publication statusPublished - 2008 Sep 29

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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