Large tunnel magnetoresistance in magnetic tunnel junctions using a Co 2MnSi Heusler alloy electrode and a MgO barrier

Sumito Tsunegi; Yuya Sakuraba; Mikihiko Oogane; Koki Takanashi; Yasuo Ando

doi:10.1063/1.2987516

Large tunnel magnetoresistance in magnetic tunnel junctions using a Co ₂MnSi Heusler alloy electrode and a MgO barrier

Sumito Tsunegi, Yuya Sakuraba, Mikihiko Oogane, Koki Takanashi, Yasuo Ando

Research output: Contribution to journal › Article › peer-review

204 Citations (Scopus)

Abstract

A large tunnel magnetoresistance (TMR) ratio of 753% has been observed at 2 K in a magnetic tunnel junction (MTJ) using a Co₂MnSi Heusler alloy electrode and a crystalline MgO tunnel barrier. This TMR ratio is the largest reported to date in MTJs using a Heusler alloy electrode. Moreover, we have observed a large TMR ratio of 217% at room temperature (RT). This TMR at RT is much larger than that of MTJs using an amorphous Al-oxide tunnel barrier. However, the temperature dependence of the TMR ratio is still large because of inelastic tunneling in the antiparallel magnetic configuration.

Original language	English
Article number	112506
Journal	Applied Physics Letters
Volume	93
Issue number	11
DOIs	https://doi.org/10.1063/1.2987516
Publication status	Published - 2008 Sep 29

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Large tunnel magnetoresistance in magnetic tunnel junctions using a Co 2MnSi Heusler alloy electrode and a MgO barrier",

abstract = "A large tunnel magnetoresistance (TMR) ratio of 753% has been observed at 2 K in a magnetic tunnel junction (MTJ) using a Co2MnSi Heusler alloy electrode and a crystalline MgO tunnel barrier. This TMR ratio is the largest reported to date in MTJs using a Heusler alloy electrode. Moreover, we have observed a large TMR ratio of 217% at room temperature (RT). This TMR at RT is much larger than that of MTJs using an amorphous Al-oxide tunnel barrier. However, the temperature dependence of the TMR ratio is still large because of inelastic tunneling in the antiparallel magnetic configuration.",

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AU - Tsunegi, Sumito

AU - Sakuraba, Yuya

AU - Oogane, Mikihiko

AU - Takanashi, Koki

AU - Ando, Yasuo

PY - 2008/9/29

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AB - A large tunnel magnetoresistance (TMR) ratio of 753% has been observed at 2 K in a magnetic tunnel junction (MTJ) using a Co2MnSi Heusler alloy electrode and a crystalline MgO tunnel barrier. This TMR ratio is the largest reported to date in MTJs using a Heusler alloy electrode. Moreover, we have observed a large TMR ratio of 217% at room temperature (RT). This TMR at RT is much larger than that of MTJs using an amorphous Al-oxide tunnel barrier. However, the temperature dependence of the TMR ratio is still large because of inelastic tunneling in the antiparallel magnetic configuration.

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