Abstract
A large tunnel magnetoresistance (TMR) ratio of 753% has been observed at 2 K in a magnetic tunnel junction (MTJ) using a Co2MnSi Heusler alloy electrode and a crystalline MgO tunnel barrier. This TMR ratio is the largest reported to date in MTJs using a Heusler alloy electrode. Moreover, we have observed a large TMR ratio of 217% at room temperature (RT). This TMR at RT is much larger than that of MTJs using an amorphous Al-oxide tunnel barrier. However, the temperature dependence of the TMR ratio is still large because of inelastic tunneling in the antiparallel magnetic configuration.
Original language | English |
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Article number | 112506 |
Journal | Applied Physics Letters |
Volume | 93 |
Issue number | 11 |
DOIs | |
Publication status | Published - 2008 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)