Large tunnel magnetoresistance in magnetic tunnel junctions using a Co 2MnSi Heusler alloy electrode and a MgO barrier

Sumito Tsunegi; Yuya Sakuraba; Mikihiko Oogane; Koki Takanashi; Yasuo Ando

doi:10.1063/1.2987516

Large tunnel magnetoresistance in magnetic tunnel junctions using a Co ₂MnSi Heusler alloy electrode and a MgO barrier

Sumito Tsunegi, Yuya Sakuraba, Mikihiko Oogane, Koki Takanashi, Yasuo Ando

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205 Citations (Scopus)

Abstract

A large tunnel magnetoresistance (TMR) ratio of 753% has been observed at 2 K in a magnetic tunnel junction (MTJ) using a Co₂MnSi Heusler alloy electrode and a crystalline MgO tunnel barrier. This TMR ratio is the largest reported to date in MTJs using a Heusler alloy electrode. Moreover, we have observed a large TMR ratio of 217% at room temperature (RT). This TMR at RT is much larger than that of MTJs using an amorphous Al-oxide tunnel barrier. However, the temperature dependence of the TMR ratio is still large because of inelastic tunneling in the antiparallel magnetic configuration.

Original language	English
Article number	112506
Journal	Applied Physics Letters
Volume	93
Issue number	11
DOIs	https://doi.org/10.1063/1.2987516
Publication status	Published - 2008

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Large tunnel magnetoresistance in magnetic tunnel junctions using a Co 2MnSi Heusler alloy electrode and a MgO barrier",

abstract = "A large tunnel magnetoresistance (TMR) ratio of 753% has been observed at 2 K in a magnetic tunnel junction (MTJ) using a Co2MnSi Heusler alloy electrode and a crystalline MgO tunnel barrier. This TMR ratio is the largest reported to date in MTJs using a Heusler alloy electrode. Moreover, we have observed a large TMR ratio of 217% at room temperature (RT). This TMR at RT is much larger than that of MTJs using an amorphous Al-oxide tunnel barrier. However, the temperature dependence of the TMR ratio is still large because of inelastic tunneling in the antiparallel magnetic configuration.",

author = "Sumito Tsunegi and Yuya Sakuraba and Mikihiko Oogane and Koki Takanashi and Yasuo Ando",

note = "Funding Information: This research was supported by Research and Development for Next-Generation Information Technology by MEXT. This research has been partly carried out at the Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University.",

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T1 - Large tunnel magnetoresistance in magnetic tunnel junctions using a Co 2MnSi Heusler alloy electrode and a MgO barrier

AU - Tsunegi, Sumito

AU - Sakuraba, Yuya

AU - Oogane, Mikihiko

AU - Takanashi, Koki

AU - Ando, Yasuo

N1 - Funding Information: This research was supported by Research and Development for Next-Generation Information Technology by MEXT. This research has been partly carried out at the Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University.

PY - 2008

Y1 - 2008

N2 - A large tunnel magnetoresistance (TMR) ratio of 753% has been observed at 2 K in a magnetic tunnel junction (MTJ) using a Co2MnSi Heusler alloy electrode and a crystalline MgO tunnel barrier. This TMR ratio is the largest reported to date in MTJs using a Heusler alloy electrode. Moreover, we have observed a large TMR ratio of 217% at room temperature (RT). This TMR at RT is much larger than that of MTJs using an amorphous Al-oxide tunnel barrier. However, the temperature dependence of the TMR ratio is still large because of inelastic tunneling in the antiparallel magnetic configuration.

AB - A large tunnel magnetoresistance (TMR) ratio of 753% has been observed at 2 K in a magnetic tunnel junction (MTJ) using a Co2MnSi Heusler alloy electrode and a crystalline MgO tunnel barrier. This TMR ratio is the largest reported to date in MTJs using a Heusler alloy electrode. Moreover, we have observed a large TMR ratio of 217% at room temperature (RT). This TMR at RT is much larger than that of MTJs using an amorphous Al-oxide tunnel barrier. However, the temperature dependence of the TMR ratio is still large because of inelastic tunneling in the antiparallel magnetic configuration.

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Large tunnel magnetoresistance in magnetic tunnel junctions using a Co ₂MnSi Heusler alloy electrode and a MgO barrier

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