Large tunnel magnetoresistance in epitaxial oxide spin-filter tunnel junctions

Takayuki Harada, Isao Ohkubo, Mikk Lippmaa, Yasuaki Sakurai, Yuji Matsumoto, Shunsuke Muto, Hideomi Koinuma, Masaharu Oshima

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)


A high-performance spin filter tunnel junction composed of an epitaxial oxide heterostructure is reported. By independently controlling the magnetic orientations of ferromagnetic tunnel barrier and electrode layers, a tunnel magnetoresistance ratio exceeding 120% is obtained purely by the spin filtering effect. A newly introduced spin filter material, Pr 0.8Ca 0.2Mn 1-yCo yO 3, is shown to be useful for building novel multibarrier spintronic tunnel devices due to its composition-controlled magnetic hardness.

Original languageEnglish
Pages (from-to)4471-4475
Number of pages5
JournalAdvanced Functional Materials
Issue number21
Publication statusPublished - 2012 Nov 7


  • epitaxy
  • magnetic coupling
  • magnetic tunnel junctions
  • oxide thin films
  • spintronics

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics


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