TY - JOUR
T1 - Large Stokes-like shift in N-polar (000-1) InGaN/GaN multiple-quantum-well light-emitting diodes
AU - Tanikawa, Tomoyuki
AU - Shojiki, Kanako
AU - Kuboya, Shigeyuki
AU - Katayama, Ryuji
AU - Matsuoka, Takashi
PY - 2016/5/1
Y1 - 2016/5/1
N2 - N-polar (000-1) (-c-plane) InGaN/GaN light-emitting diodes (LEDs) were grown by metalorganic vapor phase epitaxy, and their optoelectronic properties were evaluated by electroreflectance (ER) and electroluminescence (EL) measurements. In-c-plane LEDs, the emission energy was much lower than that in c-plane LEDs. By comparing EL and ER results, we found that the emission energy was also much lower than the transition energy. The transition energy is in good agreement with X-ray diffraction analysis results. These results indicate that-c-plane LEDs exhibit a larger Stokes-like shift than do c-plane LEDs. This Stokes-like shift is due to the strong potential fluctuation, which is possibly caused by the specific growth patterns of-c-plane III-nitrides. The dominant emission centers of the-c-plane LEDs were suggested to be the localized states of InGaN islands.
AB - N-polar (000-1) (-c-plane) InGaN/GaN light-emitting diodes (LEDs) were grown by metalorganic vapor phase epitaxy, and their optoelectronic properties were evaluated by electroreflectance (ER) and electroluminescence (EL) measurements. In-c-plane LEDs, the emission energy was much lower than that in c-plane LEDs. By comparing EL and ER results, we found that the emission energy was also much lower than the transition energy. The transition energy is in good agreement with X-ray diffraction analysis results. These results indicate that-c-plane LEDs exhibit a larger Stokes-like shift than do c-plane LEDs. This Stokes-like shift is due to the strong potential fluctuation, which is possibly caused by the specific growth patterns of-c-plane III-nitrides. The dominant emission centers of the-c-plane LEDs were suggested to be the localized states of InGaN islands.
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U2 - 10.7567/JJAP.55.05FJ03
DO - 10.7567/JJAP.55.05FJ03
M3 - Article
AN - SCOPUS:84965025717
VL - 55
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 5
M1 - 05FJ03
ER -