Large spontaneous spin-splitting and enhanced effective g-factor in two-dimensional electron gases at In0.75Ga0.25As/In0.75Al0.25As metamorphic heterojunctions

T. Kita, Y. Sato, S. Gozu, S. Yamada

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19 Citations (Scopus)


We have estimated spin-splitting energy of two-dimensional electron gases formed at metamorphic In0.75Ga0.25As/In0.75Al0.25As heterojunctions by analyzing magneto-resistance traces up to 10T. This heterojunction often reveals a large spontaneous spin-splitting at low fields, while at high fields, Zeeman splitting becomes dominant. We have investigated and compared the two sanples; one reveals beating oscillation and hence has a spontaneous or zero-field spin-splitting and another does not. In the former sample, if we assume the equal sign for both the spin-splittings, the dependency of the absolute splitting energy on the magnetic field is found to have a minimum (Δ = 2meV) at about 3.5 T, in which we also confirmed a zero-field spin-splitting of Δ0 = 11.04 meV and very much enhanced g* = -42.0 at 1.5 T. In contrast, effective g-factor (g*) obtained at high fields in the latter sample is g* = -7.7 at 1.5 T, which is fairly smaller than that in the former. Origins of those features are discussed and the possibility of linear spin-splitting dependency on magnetic field is pointed out.

Original languageEnglish
Pages (from-to)65-69
Number of pages5
JournalPhysica B: Condensed Matter
Issue number1-4
Publication statusPublished - 2001 Jan 1


  • Coincidence method
  • Effective g-factor
  • InGaAs/InAlAs heterojunctions

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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