Large spin-accumulation signal in Si for epitaxial CoFe/highly (100)-textured MgO/Si devices

H. Sugiyama, M. Ishikawa, T. Inokuchi, T. Tanamoto, Y. Saito, N. Tezuka

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)

Abstract

Spin-accumulation in Si for epitaxial CoFe/highly (100)-textured MgO/Si devices is investigated and compared to that for CoFe/polycrystalline or (110)-textured MgO/Si devices. We find that magnesium (Mg) insertion between MgO and Si leads to highly (100)-textured MgO and epitaxial CoFe films. Interface resistance dependence on magnitude of spin-accumulation signal by the three-terminal Hanle measurement is quantitatively evaluated. Devices with highly (100)-textured MgO show larger magnitude of spin-accumulation signal in the low-interface-resistance region, than that with polycrystalline or (110)-textured MgO. These results indicate that magnitude of spin-accumulation signal depends on the crystallinity or the texture of ferromagnet/tunnel barrier layers on Si.

Original languageEnglish
Pages (from-to)49-52
Number of pages4
JournalSolid State Communications
Volume190
DOIs
Publication statusPublished - 2014 Jul

Keywords

  • A. Ferromagnet
  • C. Spin MOSFET
  • D. Hanle effect
  • D. Spin-accumulation

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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