Large single-domain growth of monolayer WS2 by rapid-cooling chemical vapor deposition

Chao Li, Yoshiki Yamaguchi, Toshiro Kaneko, Toshiaki Kato

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)


A novel method for the synthesis of large monolayer and single-crystal tungsten disulfide (WS2) has been developed by introducing a rapid-cooling stage to the conventional chemical vapor deposition (CVD). The maximum size of single-crystal WS2 can be increased up to 320μm by adjusting the growth parameters during the rapid-cooling CVD. This is one of the largest sizes of single-crystal transition metal dichalcogenides directly grown on an insulating substrate. A theoretical model reveals that the increase in WS2 size can be explained by the enhanced nucleation probability and the growth velocity, caused by the additional precursors supplied during the rapid cooling.

Original languageEnglish
Article number075201
JournalApplied Physics Express
Issue number7
Publication statusPublished - 2017 Jul

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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