Large-radius neutral beam enhanced chemical vapor deposition process for non-porous ultra-low-k SiOCH

Yoshiyuki Kikuchi, Yasuaki Sakakibara, Seiji Samukawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Pores in ultra-low-k carbon-doped silicon oxide (SiOCH) film have been a serious problem because they produce fragile film strength, with the film incurring damage from integration and diffusion of Cu atoms in thermal annealing. To address this problem, we developed a practical large-radius neutral beam enhanced CVD process to precisely control the film structure so as to eliminate any pores in the film. We used the process with dimethoxy-tetramethyl-disiloxane (DMOTMDS) as a precursor to form a SiOCH film on an 8-inch Si wafer and obtained a non-porous film having an ultra-low k-value of 2.2 with sufficient modulus (>10 GPa). Analyzing the film structure by experimental and theoretical techniques showed that symmetric polymethylsilaxane (PMS) chains were grown and cross-linked to each other in the film. This particular film did not incur any damage from acid or alkali solution or oxygen plasma. Furthermore, the dense film almost completely resisted Cu diffusion into it during thermal annealing.

Original languageEnglish
Title of host publicationAdvanced Etch Technology for Nanopatterning III
ISBN (Print)9780819499776
Publication statusPublished - 2014
EventAdvanced Etch Technology for Nanopatterning III - San Jose, CA, United States
Duration: 2014 Feb 242014 Feb 25

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X


OtherAdvanced Etch Technology for Nanopatterning III
Country/TerritoryUnited States
CitySan Jose, CA


  • CVD
  • Interconnect
  • Microwave plasma
  • Neutral beam
  • Porous low-k
  • SiOCH

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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