We report electrical transport properties and electronic structure of a nonmagnetic metal Cu2Sb single crystal. Cu2Sb was found to be a compensated metal with high carrier density ∼1022cm-3 and high carrier mobility ≥103cm2/Vs for both electron and hole carriers. The current-in-plane magnetoresistance at 2 K and 9 T was 730%, while the current-perpendicular-to-plane magnetoresistance at 2 K and 9 T was 2700% without the saturation. Angle-resolved photoemission spectroscopy throughout the three-dimensional (3D) bulk Brillouin zone signified a quasi-two-dimensional (2D) electron pocket axially centered along the M-A line and a 3D hole pocket at the Γ point, in accordance with the electron-hole compensated nature. The presence of quasi-2D open Fermi surface, in line with the first-principles band-structure calculations, is likely responsible for the observed nonsaturating current-in-plane magnetoresistance. The present result lays the foundation for realizing large magnetoresistance via Fermiology engineering in compensated metals.
ASJC Scopus subject areas
- Materials Science(all)
- Physics and Astronomy (miscellaneous)