Large magnetoresistance of a compensated metal Cu2Sb correlated with its Fermi surface topology

Mizuki Endo, Hideyuki Kawasoko, Seigo Soma, Kunihiko Yamauchi, Miho Kitamura, Koji Horiba, Hiroshi Kumigashira, Noriaki Kimura, Tamio Oguchi, Takafumi Sato, Tomoteru Fukumura

Research output: Contribution to journalArticlepeer-review

Abstract

We report electrical transport properties and electronic structure of a nonmagnetic metal Cu2Sb single crystal. Cu2Sb was found to be a compensated metal with high carrier density ∼1022cm-3 and high carrier mobility ≥103cm2/Vs for both electron and hole carriers. The current-in-plane magnetoresistance at 2 K and 9 T was 730%, while the current-perpendicular-to-plane magnetoresistance at 2 K and 9 T was 2700% without the saturation. Angle-resolved photoemission spectroscopy throughout the three-dimensional (3D) bulk Brillouin zone signified a quasi-two-dimensional (2D) electron pocket axially centered along the M-A line and a 3D hole pocket at the Γ point, in accordance with the electron-hole compensated nature. The presence of quasi-2D open Fermi surface, in line with the first-principles band-structure calculations, is likely responsible for the observed nonsaturating current-in-plane magnetoresistance. The present result lays the foundation for realizing large magnetoresistance via Fermiology engineering in compensated metals.

Original languageEnglish
Article number105002
JournalPhysical Review Materials
Volume5
Issue number10
DOIs
Publication statusPublished - 2021 Oct

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy (miscellaneous)

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